© 2007 IXYS All rights reserved
4 - 4
VUM 24-05N
20070605c
IXYS reserves the right to change limits, test conditions and dimensions
0 50 100 150 200 250
0
1
2
3
4
5
6
7
0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
0 20406080100120
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
40 60 80 100 120
0
1
2
3
4
5
6
0 100 200 300 400 500 600
0
10
20
30
40
50
kW
P
out
Z
thJC
K/W
t
-di
F
/dt
T
S
°C
P
out
kW
0 100 200 300 400 500 600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
V
FR
μs
-di
F
/dt
I
RM
A
20 40 60 80 100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
T
J
K
t
V
in
= 230 V/50 Hz
T
S
=85°C
V
in
= 115 V/60 Hz
P
out
V
in (RMS)
kW
T
S
=85°C
f
c
= 40 kHz
f
c
= 80 kHz
V
f
c
= 80 kHz
V
in
= 230 V/50 Hz
V
in
= 115 V/60 Hz
°C
A/μs
A/μs
Rectifier Diodes
Boost Diode
MOSFET
I
F
= 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
I
RM
Q
r
I
F
= 37 A
I
F
= 74 A
I
F
= 37 A
I
F
= 18.5 A
typ.
max.
V
f
c
di
F
/dt
kHz
A/μs
s
V
FR
t
FR
t
FR
μs
t
rr
T
VJ
=100°C
V
R
= 350 V
T
VJ
=100°C
V
R
= 350 V
VUM 24
Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus
-di
F
/dt (Boost Diode) junction temperature (Boost Diode) -di
F
/dt (Boost Diode)
Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus
-di
F
/dt (Boost Diode) frequency (Module) mains voltage
Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)
T
VJ
