FS100R17KE3BOSA1 Datasheet FS100R17KE3BOSA1 | P1-P3

1

TechnischeInformation/TechnicalInformation

FS100R17KE3

IGBT-Module

IGBT-modules

preparedby:MW

approvedby:WR

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

T

vj

= 25°C V

CES

 1700  V

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

T

C

= 80°C, T

vj max

= 150°C

T

C

= 25°C, T

vj max

= 150°C

I

C nom

I

C



100

145



A

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

t

P

= 1 ms I

CRM

 200  A

Gesamt-Verlustleistung

Totalpowerdissipation

T

C

= 25°C, T

vj max

= 150 P

tot

 555  W

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

 V

GES

 +/-20  V

CharakteristischeWerte/CharacteristicValues

min. typ. max.

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

I

C

= 100 A, V

GE

= 15 V

I

C

= 100 A, V

GE

= 15 V

V

CE sat

2,00

2,40

2,45

V

T

vj

= 25°C

T

vj

= 125°C

Gate-Schwellenspannung

Gatethresholdvoltage

I

C

= 4,00 mA, V

CE

= V

GE

, T

vj

= 25°C V

GEth

5,2 5,8 6,4 V

Gateladung

Gatecharge

V

GE

= -15 V ... +15 V Q

G

 1,20  µC

InternerGatewiderstand

Internalgateresistor

T

vj

= 25°C R

Gint

 7,5  Ω

Eingangskapazität

Inputcapacitance

f = 1 MHz, T

vj

= 25°C, V

CE

= 25 V, V

GE

= 0 V C

ies

 9,00  nF

Rückwirkungskapazität

Reversetransfercapacitance

f = 1 MHz, T

vj

= 25°C, V

CE

= 25 V, V

GE

= 0 V C

res

 0,29  nF

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

V

CE

= 1700 V, V

GE

= 0 V, T

vj

= 25°C I

CES

  5,0 mA

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

V

CE

= 0 V, V

GE

= 20 V, T

vj

= 25°C I

GES

  400 nA

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

I

C

= 100 A, V

CE

= 900 V

V

GE

= ±15 V

R

Gon

= 4,0 Ω

t

d on



0,37

0,40



µs

T

vj

= 25°C

T

vj

= 125°C

Anstiegszeit,induktiveLast

Risetime,inductiveload

I

C

= 100 A, V

CE

= 900 V

V

GE

= ±15 V

R

Gon

= 4,0 Ω

t

r



0,04

0,05



µs

T

vj

= 25°C

T

vj

= 125°C

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

I

C

= 100 A, V

CE

= 900 V

V

GE

= ±15 V

R

Goff

= 4,0 Ω

t

d off



0,65

0,80



µs

T

vj

= 25°C

T

vj

= 125°C

Fallzeit,induktiveLast

Falltime,inductiveload

I

C

= 100 A, V

CE

= 900 V

V

GE

= ±15 V

R

Goff

= 4,0 Ω

t

f



0,18

0,30



µs

T

vj

= 25°C

T

vj

= 125°C

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

I

C

= 100 A, V

CE

= 900 V, L

S

= 30 nH

V

GE

= ±15 V

R

Gon

= 4,0 Ω

E

on



22,0

32,0



mJ

T

vj

= 25°C

T

vj

= 125°C

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

I

C

= 100 A, V

CE

= 900 V, L

S

= 30 nH

V

GE

= ±15 V

R

Goff

= 4,0 Ω

E

off



21,5

31,5



mJ

T

vj

= 25°C

T

vj

= 125°C

Kurzschlußverhalten

SCdata

V

GE

≤ 15 V, V

CC

= 1000 V

V

CEmax

= V

CES

-L

sCE

·di/dt

I

SC



400



A

T

vj

= 125°C

t

P

≤ 10 µs,

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proIGBT/perIGBT R

thJC

  0,225 K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

 T

vj op

-40  125 °C

2

TechnischeInformation/TechnicalInformation

FS100R17KE3

IGBT-Module

IGBT-modules

preparedby:MW

approvedby:WR

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryData

Diode,Wechselrichter/Diode,Inverter

HöchstzulässigeWerte/MaximumRatedValues

PeriodischeSpitzensperrspannung

Repetitivepeakreversevoltage

T

vj

= 25°C V

RRM

 1700  V

Dauergleichstrom

ContinuousDCforwardcurrent

 I

F

 100  A

PeriodischerSpitzenstrom

Repetitivepeakforwardcurrent

t

P

= 1 ms I

FRM

 200  A

Grenzlastintegral

I²t-value

V

R

= 0 V, t

P

= 10 ms, T

vj

= 125°C I²t  1800  A²s

CharakteristischeWerte/CharacteristicValues

min. typ. max.

Durchlassspannung

Forwardvoltage

I

F

= 100 A, V

GE

= 0 V

I

F

= 100 A, V

GE

= 0 V

V

F

1,80

1,90

2,20

V

T

vj

= 25°C

T

vj

= 125°C

Rückstromspitze

Peakreverserecoverycurrent

I

F

= 100 A, - di

F

/dt = 2450 A/µs (T

vj

=125°C)

V

R

= 900 V

V

GE

= -15 V

I

RM



155

165 

A

T

vj

= 25°C

T

vj

= 125°C

Sperrverzögerungsladung

Recoveredcharge

I

F

= 100 A, - di

F

/dt = 2450 A/µs (T

vj

=125°C)

V

R

= 900 V

V

GE

= -15 V

Q

r



29,0

48,5



µC

T

vj

= 25°C

T

vj

= 125°C

AbschaltenergieproPuls

Reverserecoveryenergy

I

F

= 100 A, - di

F

/dt = 2450 A/µs (T

vj

=125°C)

V

R

= 900 V

V

GE

= -15 V

E

rec



15,5

27,5



mJ

T

vj

= 25°C

T

vj

= 125°C

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proDiode/perdiode R

thJC

  0,39 K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

 T

vj op

-40  125 °C

NTC-Widerstand/NTC-Thermistor

CharakteristischeWerte/CharacteristicValues

min. typ. max.

Nennwiderstand

Ratedresistance

T

C

= 25°C R

25

 5,00  kΩ

AbweichungvonR100

DeviationofR100

T

C

= 100°C, R

100

= 493 Ω ∆R/R -5  5 %

Verlustleistung

Powerdissipation

T

C

= 25°C P

25

  20,0 mW

B-Wert

B-value

R

2

= R

25

exp [B

25/50

(1/T

2

- 1/(298,15 K))] B

25/50

 3375  K

B-Wert

B-value

R

2

= R

25

exp [B

25/80

(1/T

2

- 1/(298,15 K))] B

25/80

 t.b.d.  K

B-Wert

B-value

R

2

= R

25

exp [B

25/100

(1/T

2

- 1/(298,15 K))] B

25/100

 t.b.d.  K

AngabengemäßgültigerApplicationNote.

Specificationaccordingtothevalidapplicationnote.

3

TechnischeInformation/TechnicalInformation

FS100R17KE3

IGBT-Module

IGBT-modules

preparedby:MW

approvedby:WR

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryData

Modul/Module

Isolations-Prüfspannung

Isolationtestvoltage

RMS, f = 50 Hz, t = 1 min. V

ISOL

 3,4  kV

MaterialModulgrundplatte

Materialofmodulebaseplate

   Cu  

InnereIsolation

Internalisolation

Basisisolierung(Schutzklasse1,EN61140)

basicinsulation(class1,IEC61140)

  Al

2

0

3

 

Kriechstrecke

Creepagedistance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

 

10,0

 mm

Luftstrecke

Clearance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

 

7,5

 mm

VergleichszahlderKriechwegbildung

Comperativetrackingindex

 CTI  > 225  

min. typ. max.

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proModul/permodule

λ

Paste

=1W/(m·K)/λ

grease

=1W/(m·K)

R

thCH

 0,009 K/W

Modulstreuinduktivität

Strayinductancemodule

 L

sCE

 21  nH

Modulleitungswiderstand,Anschlüsse-

Chip

Moduleleadresistance,terminals-chip

T

C

=25°C,proSchalter/perswitch R

CC'+EE'

 1,80  mΩ

Lagertemperatur

Storagetemperature

 T

stg

-40  125 °C

Anzugsdrehmomentf.Modulmontage

Mountingtorqueformodulmounting

SchraubeM5-Montagegem.gültigerApplikationsschrift

ScrewM5-Mountingaccordingtovalidapplicationnote

M 3,00 - 6,00 Nm

Gewicht

Weight

 G  300  g

FS100R17KE3BOSA1

FS100R17KE3BOSA1

Products related to this Datasheet