SI7846DP-T1-E3 Datasheet SI7846DP-T1-GE3, SI7846DP-T1-E3 | P1-P3

Vishay Siliconix

Si7846DP

Document Number: 71442

S09-0537-Rev. F, 06-Apr-09

www.vishay.com

1

N-Channel 150-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETS

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

• PWM Optimized for Fast Switching

• 100 % R

g

Tested

APPLICATIONS

• Primary Side Switch for High Density DC/DC

• Telecom/Server 48 V DC/DC

• Industrial and 42 V Automotive

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

150

0.050 at V

GS

= 10 V 6.7

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerP AK SO-8

Bottom V i e w

Ordering Information:

Si7846DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

Si7846DP-T1-E3 (Lead (Pb)-free)

N-Channel MOSFE

T

G

D

S

Notes

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage V

DS

150

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

C

= 25 °C

I

D

24.5

A

T

C

= 70 °C 19.5

T

A

= 25 °C 6.7 4.0

T

A

= 70 °C 5.4 3.3

Pulsed Drain Current I

DM

50

Avalanche Current L = 0.1 mH I

AS

25

Continuous Source Current (Diode Conduction)

a

I

S

4.3 1.6

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

5.2 1.9

W

T

A

= 70 °C 3.3 1.2

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

19 24

°C/W

Steady State 52 65

Maximum Junction-to-Case (Drain) Steady State R

thJC

1.5 1.8

www.vishay.com

2

Document Number: 71442

S09-0537-Rev. F, 06-Apr-09

Vishay Siliconix

Si7846DP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2.0 4.5 V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 150 V, V

GS

= 0 V 1

µA

V

DS

= 150 V, V

GS

= 0 V, T

J

= 55 °C 5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V 50 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 5 A 0.041 0.050

Ω

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 5 A 18 S

Diode Forward Voltage

a

V

SD

I

S

= 2.8 A, V

GS

= 0 V 0.75 1.1 V

Dynamic

b

Total Gate Charge Q

g

V

DS

= 75 V, V

GS

= 10 V, I

D

= 5 A

30 36

nC

Gate-Source Charge Q

gs

8.5

Gate-Drain Charge Q

gd

8.5

Gate Resistance R

g

0.20.851.4 Ω

Tur n - O n D e l ay Time t

d(on)

V

DD

= 75 V, R

L

= 15 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 6 Ω

12 18

ns

Rise Time t

r

711

Turn-Off Delay Time t

d(off)

22 33

Fall Time t

f

10 15

Source-Drain Reverse Recovery Time t

rr

I

F

= 2.8 A, dI/dt = 100 A/µs 40 70

Output Characteristics

0

10

20

30

40

50

0246810

V

GS

= 10 V thru 7 V

V

DS

- Drain-to-Source Voltage (V)

-

Drain Current (A)

I

D

6

V

5 V

3 V, 4 V

Transfer Characteristics

0

10

20

30

40

50

01234567

T

C

= 125 °C

- 55 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)

I

D

Document Number: 71442

S09-0537-Rev. F, 06-Apr-09

www.vishay.com

3

Vishay Siliconix

Si7846DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

- On-Resistance (Ω)R

DS(on)

0.00

0.02

0.04

0.06

0.08

0.10

0 1020304050

I

D

- Drain Current (A)

V

GS

= 10 V

0

4

8

12

16

20

0 15304560

V

DS

= 75 V

I

D

= 5 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

J

= 150 °C

T

J

= 25 °C

50

10

1

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

0 30 60 90 120 150

V

DS

- Drain-to-Source Voltage (V)

C

oss

C

iss

C

- Capacitance (pF)

C

rss

0.0

0.5

1.0

1.5

2.0

2.5

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 5 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

0.00

0.03

0.06

0.09

0.12

0.15

0246810

I

D

= 5 A

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

SI7846DP-T1-E3

SI7846DP-T1-E3

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