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SI7846DP-T1-E3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
Vishay Siliconix
Si7846DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 1.5
- 1.0
- 0.5
0.0
0.5
1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Avalanche Current vs. Time
10
-5
10
-3
10
-2
10
-1
1
t
in
(s)
I
Dav
(A)
0.1
1
10
100
125 °C
25 °C
10
-4
Single Pulse Power, Junction-to-Ambient
0.001
0
1
80
100
20
100.01
Time (s)
60
40
Power (W)
0.1
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 52 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si7846DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71442
.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
0.05
Document Number: 71655 www.vishay.com
Revison: 15-Feb-10 1
Package Information
Vishay Siliconix
PowerPAK
®
SO-8, (SINGLE/DUAL)
MILLIMETERS INCHES
DIM. MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 0.00 - 0.05 0.000 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4
0.57 TYP. 0.0225 TYP.
D5
3.98 TYP. 0.157 TYP.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4
0.75 TYP. 0.030 TYP.
e 1.27 BSC 0.050 BSC
K
1.27 TYP. 0.050 TYP.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
θ 0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M
0.125 TYP. 0.005 TYP.
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
3.
Dimensions exclusive of mold flash and cutting burrs.
1.
Notes
2
Inch will govern.
Dimensions exclusive of mold gate burrs.
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D
D1
D2
c
θ
A
θ
E1
θ
D1
E2
D2
e
b
1
2
3
4
H
4
3
2
1
θ
1
2
3
4
b
L
D2
D3(2x)
Z
A1
K1
K
D
E
W
L1
D5
E3
D4
E4
E4
K
L
H
E2
D4
D5
M
E3
0.150 ± 0.008
2
2
P1-P3P4-P6P7-P9P10-P12

SI7846DP-T1-E3

Mfr. #:
Buy SI7846DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V, 50 MOHMS@10V, PWM
Lifecycle:
New from this manufacturer.
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