IXFA12N65X2 Datasheet IXFA12N65X2, IXFP12N65X2 | P1-P3

DS100749B(6/18)

X2-Class HiPERFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXFA12N65X2

IXFP12N65X2

IXFH12N65X2

V

DSS

= 650V

I

D25

= 12A

R

DS(on)



 310m





Features



International Standard Packages



Low R

DS(ON)

and Q

G



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 650 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 3.0 5.0 V

I

GSS

V

GS

= 30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 10 A

T

J

= 125C 500 A

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 310 m

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 650 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 650 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C12A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

24 A

I

A

T

C

= 25C6A

E

AS

T

C

= 25C 300 mJ

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150°C 50 V/ns

P

D

T

C

= 25C 180 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

G

S

D (Tab)

TO-220 (IXFP)

TO-263 (IXFA)

D (Tab)

S

G

D

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA12N65X2 IXFP12N65X2

IXFH12N65X2

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V 12 A

I

SM

Repetitive, pulse Width Limited by T

JM

48 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

155 ns

Q

RM

1 μC

I

RM

13 A

I

F

= 6A, -di/dt = 100A/μs

V

R

= 100V

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 4.8 8.0 S

R

Gi

Gate Input Resistance 4.0 

C

iss

1134 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 712 pF

C

rss

1 pF

C

o(er)

42 pF

C

o(tr)

132 pF

t

d(on)

27 ns

t

r

26 ns

t

d(off)

45 ns

t

f

12 ns

Q

g(on)

18.5 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

6.7 nC

Q

gd

5.0 nC

R

thJC

0.69 C/W

R

thCS

TO-220 0.50 C/W

TO-247 0.21 C/W

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 20 (External)

Effective Output Capacitance

Energy related

Time related

V

GS

= 0V

V

DS

= 0.8 • V

DSS

IXFA12N65X2 IXFP12N65X2

IXFH12N65X2

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

2

4

6

8

10

12

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

7V

5V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

2

4

6

8

10

12

024681012

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

4V

6V

7V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 6A Value vs.

Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 12A

I

D

= 6A

Fig. 5. R

DS(on)

Normalized to I

D

= 6A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 2 4 6 8 10121416182022

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

4

8

12

16

20

24

0 5 10 15 20 25

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

6V

8V

5V

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

IXFA12N65X2

IXFA12N65X2

Products related to this Datasheet