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IXFA12N65X2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA12N65X2 IXFP12N65X2
IXFH12N65X2
Fig. 7. Maximum Drain Current vs. Case Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
2
4
6
8
10
12
012345678910
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 11. Gate Charge
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 6A
I
G
= 10mA
Fig. 12. Capacitance
0.1
1
10
100
1000
10000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 8. Input Admittance
0
1
2
3
4
5
6
7
8
9
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA12N65X2 IXFP12N65X2
IXFH12N65X2
IXYS REF: F_12N65X2 (X3-S602) 9-08-16
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
25μs
100μs
R
DS(
on
)
Limit
1ms
10ms
DC
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
Fig. 13. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
8
9
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA12N65X2 IXFP12N65X2
IXFH12N65X2
TO-263 Outline
TO-220 Outline
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
P1-P3P4-P6

IXFA12N65X2

Mfr. #:
Buy IXFA12N65X2
Manufacturer:
Littelfuse
Description:
MOSFET 650V/12A TO-263
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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