IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
Isolated plastic package
Low reverse recovery current
Low thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
BYC10DX-600
Hyperfast power diode
Rev. 1 — 30 June 2011 Product data sheet
TO-220F
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
--600V
I
F(AV)
average forward current square-wave pulse;
δ =0.5; T
h
=4C;
see Figure 1; see Figure 2
--10A
Static characteristics
V
F
forward voltage I
F
=10A; T
j
=2C;
see Figure 5
-22.5V
I
F
=10A; T
j
=15C;
see Figure 5
-1.41.8V
Dynamic characteristics
t
rr
reverse recovery time I
F
=10A; V
R
= 400 V;
dI
F
/dt = 500 A/µs;
T
j
=2C; see Figure 6
-18-ns
BYC10DX-600 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 30 June 2011 2 of 12
NXP Semiconductors
BYC10DX-600
Hyperfast power diode
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD113 (TO-220F)
2 A anode
mb n.c. mounting base; isolated
21
mb
A
001aaa020
K
Table 3. Ordering information
Type number Package
Name Description Version
BYC10DX-600 TO-220F plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 "full pack"
SOD113

BYC10DX-600,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers PWR 600 V 10 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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