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BYC10DX-600,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BYC10DX-600
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 201
1. All rights reserv
ed.
Product data sheet
Rev
. 1 — 30 June 201
1
6 of 12
NXP Semiconductors
BYC10DX-600
Hyperfast power diode
7.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
St
atic characteris
tics
V
F
forward voltage
I
F
=1
0A
;
T
j
=2
5°
C
;
s
e
e
Figure 5
-2
2
.
5
V
I
F
=1
0A
;
T
j
= 150 °C; see
Figure 5
-1
.
4
1
.
8
V
I
F
=2
0A
;
T
j
= 150 °C; see
Figure 5
-1
.
7
2
.
2
V
I
R
reverse current
V
R
= 500 V
; T
j
=1
0
0
°
C
-
1
.
1
3
m
A
V
R
= 600 V
-
9
200
µA
Dynamic ch
aracteri
stics
t
rr
reverse recovery time
I
F
=1A
;
V
R
=3
0V
;
d
I
F
/dt = 50 A/µs;
T
j
= 25 °C; see
Figure 6
-
1
53
0n
s
I
F
=1
0A
;
V
R
= 400 V
; dI
F
/dt =
500
A/
µs;
T
j
= 25 °C; see
Figure 6
-1
8
-n
s
I
RM
peak reverse recovery
current
I
F
=1
0A
;
V
R
= 400 V
; dI
F
/dt =
500
A/
µs;
T
j
= 100 °C; see
Figure
6
-9
.
5
1
2
A
I
F
=1
0A
;
V
R
= 400 V
; dI
F
/dt = 50 A/µs;
T
j
= 125 °C; see
Figure
6
-3
7
.
5
A
V
FR
forward recovery voltage
I
F
=1
0A
;
d
I
F
/dt =
100
A
/µs; T
j
=2
5°
C
;
see
Figure 7
-8
1
1
V
Fig 5.
Forwar
d current as a
function of fo
rward
voltage
Fig 6.
Reverse rec
overy definitions; ramp recove
ry
003aag300
V
F
(V)
03
2
1
8
12
4
16
20
I
F
(A)
0
(1)
(2)
(3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
BYC10DX-600
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 201
1. All rights reserv
ed.
Product data sheet
Rev
. 1 — 30 June 201
1
7 of 12
NXP Semiconductors
BYC10DX-600
Hyperfast power diode
Fig 7.
Forward re
covery definitio
ns
001aab912
time
time
V
FRM
V
F
I
F
V
F
BYC10DX-600
All informatio
n provided in thi
s document is su
bject to legal dis
claimers.
© NXP B.V
. 201
1. All rights reserv
ed.
Product data sheet
Rev
. 1 — 30 June 201
1
8 of 12
NXP Semiconductors
BYC10DX-600
Hyperfast power diode
8.
Package outline
Fig 8.
Packag
e outline SOD113 (TO-22
0F)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD113
2-lead TO-220F
SOD113
02-04-09
07-06-18
Notes
1. Terminals are uncontrolled within zone L
1
.
2. z is depth of T.
UNIT
A
mm
4.6
4.0
2.9
2.5
0.9
0.7
0.7
0.4
15.8
15.2
10.3
9.7
5.08
2.7
1.7
0.6
0.4
3.3
2.8
2.55
0.4
2.6
A
1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
0
10
20 mm
scale
b
b
1
1.1
0.9
c
D
E
e
H
E
max
19.0
L
2
max
0.5
j
k
L
14.4
13.5
L
1
(1)
m
6.5
6.3
P
3.2
3.0
Qq
2.6
2.3
T
w
z
(2)
0.8
A
A
1
c
Q
k
j
m
z
e
w
M
12
b
E
P
b
1
q
D
T
H
E
L
L
1
(1)
L
2
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BYC10DX-600,127
Mfr. #:
Buy BYC10DX-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers PWR 600 V 10 A
Lifecycle:
New from this manufacturer.
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