IRLR3110ZPBF Datasheet IRLR3110ZTRPBF, IRLR3110ZTRLPBF, IRLU3110ZPBF | P1-P3

11/30/09

www.irf.com 1

HEXFET

®

is a registered trademark of International Rectifier.

Description

Specifically designed for Industrial applications,

this HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Industrial applications

and a wide variety of other applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

PD - 97175B

IRLR3110ZPbF

IRLU3110ZPbF

HEXFET

®

Power MOSFET

V

DSS

= 100V

R

DS(on)

= 14mΩ

S

D

G

D-Pak

IRLR3110ZPbF

I-Pak

IRLU3110ZPbF

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

A

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Package Limited)

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range

°C

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter T

y

p. Max. Units

R

θJC

Junction-to-Case

––– 1.05

R

θJA

Junction-to-Ambient (PCB mount)

––– 40 °C/W

R

θJA

Junction-to-Ambient

––– 110

140

110

See Fig.12a, 12b, 15, 16

140

0.95

±16

Max.

63

45

250

42

-55 to + 175

300

10 lbf

in (1.1N m)

IRLR/U3110ZPbF

2 www.irf.com

S

D

G

S

D

G

El

ectr

i

ca

l Ch

aracter

i

st

i

cs

@ T

J

=

2

5

°C (

un

l

ess

ot

h

erw

i

se

spec

ifi

e

d)

Parameter Min. T

y

p. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Volta

g

e 100 ––– ––– V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Volta

g

e Temp. Coefficient ––– 0.077 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 11 14

m

Ω

––– 12 16

V

GS(th)

Gate Threshold Volta

g

e 1.0 ––– 2.5 V

g

fs Forward Transconductance 52 ––– ––– S

I

DSS

Drain-to-Source Leaka

g

e Current ––– ––– 20

µ

A

––– ––– 250

I

GSS

Gate-to-Source Forward Leaka

g

e ––– ––– 200 nA

Gate-to-Source Reverse Leaka

g

e ––– ––– -200

Q

g

Total Gate Char

g

e ––– 34 48

Q

gs

Gate-to-Source Char

g

e ––– 10 ––– nC

Q

gd

Gate-to-Drain ("Miller") Char

g

e ––– 15 –––

t

d(on)

Turn-On Dela

y

Time ––– 24 –––

t

r

Rise Time ––– 110 –––

t

d(off)

Turn-Off Dela

y

Time ––– 33 ––– ns

t

f

Fall Time ––– 48 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from packa

g

e

and center of die contact

C

iss

Input Capacitance ––– 3980 –––

C

oss

Output Capacitance ––– 310 –––

C

rss

Reverse Transfer Capacitance ––– 130 ––– pF

C

oss

Output Capacitance ––– 1820 –––

C

oss

Output Capacitance ––– 170 –––

C

oss

eff.

Effective Output Capacitance ––– 320 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– ––– 63

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 250

(Body Diode)

V

SD

Diode Forward Volta

g

e––––––1.3V

t

rr

Reverse Recover

y

Time –––3451ns

Q

rr

Reverse Recover

y

Char

g

e ––– 42 63 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 4.5V, I

D

= 32A

V

GS

= 16V

V

GS

= -16V

V

DS

= 50V

V

DS

= 25V, I

D

= 38A

I

D

= 38A

Conditions

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 80V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 80V

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 38A, V

GS

= 0V

T

J

= 25°C, I

F

= 38A, V

DD

= 50V

di/dt = 100A/

µ

s

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 38A

V

DS

= V

GS

, I

D

= 100µA

V

DS

= 100V, V

GS

= 0V

V

DS

= 100V, V

GS

= 0V, T

J

= 125°C

V

GS

= 4.5V

V

DD

= 50V

I

D

= 38A

R

G

= 3.7

Ω

IRLR/U3110ZPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

BOTTOM 2.5V

0 2 4 6 8 10 12 14 16

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

≤

60µs PULSE WIDTH

0 255075

I

D

,Drain-to-Source Current (A)

0

25

50

75

100

125

150

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 10V

300µs PULSE WIDTH

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

4.5V

3.5V

3.0V

2.7V

BOTTOM 2.5V

≤

60µs PULSE WIDTH

Tj = 25°C

2.5V

IRLR3110ZPBF

IRLR3110ZPBF

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