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IRLR3110ZPBF

P1-P3P4-P6P7-P9P10-P11
IRLR/U3110ZPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
0 10203040
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
I
D
= 38A
IRLR/U3110ZPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 63A
V
GS
= 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.383 0.000267
0.667 0.003916
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
IRLR/U3110ZPbF
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
50
100
150
200
250
300
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 4.4A
6.5A
BOTTOM 38A
-75 -50 -25 0 25 50 75 100 125 150 175 200
T
J
, Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 100µA
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
P1-P3P4-P6P7-P9P10-P11

IRLR3110ZPBF

Mfr. #:
Buy IRLR3110ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 42A DPAK
Lifecycle:
New from this manufacturer.
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