L6571AD013TR

January 2010 Doc ID 4946 Rev 6 1/12
12
L6571
High voltage half bridge driver with oscillator
Features
High voltage rail up to 600 V
BCD off line technology
15.6 V Zener clamp on Vs
Driver current capability:
Sink current = 270 mA
Source current = 170 mA
Very low start up current: 150 mA
Undervoltage lockout with hysteresis
Programmable oscillator frequency
Dead time 1.25 μs (L6571A) or 0.72 μs
(L6571B)
dV/dt immunity up to ±50 V/ns
ESD protection
Description
The device is a high voltage half bridge driver with
built in oscillator. The frequency of the oscillator
can be programmed using external resistor and
capacitor.
The internal circuitry of the device allows it to be
driven also by external logic signal.
The output drivers are designed to drive external
nchannel power MOSFET and IGBT. The internal
logic assures a dead time to avoid cross-
conduction of the power devices.
Two version are available: L6571A and L6571B.
They differ in the internal dead time: 1.25μs and
0.72 μs (typ.)
DIP-8 SO8
Figure 1. Block diagram
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Contents L6571A - L6571B
2/12 Doc ID 4946 Rev 6
Contents
1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Oscillator frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Order information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
L6571A - L6571B Maximum ratings
Doc ID 4946 Rev 6 3/12
1 Maximum ratings
1.1 Absolute maximum ratings
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (human body model)
1.2 Thermal data
1.3 Recommended operating conditions
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
S
(1)
1. The device has an internal zener clamp between GND and VS (typical 15.6 V).Therefore the circuit should
not be driven by a DC low impedance power source.
Supply current 25 mA
V
CF
Oscillator resistor voltage 18 V
V
LVG
Low side switch gate output 14.6 V
V
OUT
High side switch source output -1 to V
BOOT
-18 V
V
HVG
High side switch gate output -1 to V
BOOT
V
V
BOOT
Floating supply voltage 618 V
V
BOOT/OUT
Floating supply vs OUT voltage 18 V
dV
BOOT/dt
VBOOT slew rate (Repetitive) ± 50 V/ns
dV
OUT/dt
VOUT slew rate (Repetitive) ± 50 V/ns
T
stg
Storage temperature -40 to 150 °C
T
J
Junction temperature -40 to 150 °C
T
amb
Ambient temperature (Operative) -40 to 125 °C
Table 2. Thermal data
Symbol Parameter MDIP8 SO8 Unit
R
thJA
Thermal resistance junction-ambient max 100 150 °C/W
Table 3. Recommended operating conditions
Symbol Parameter Min. Max. Unit
V
S
Supply voltage 10 VCL V
V
BOOT
Floating supply voltage - 500 V
V
OUT
High side switch source output -1
VBOOT
-VCL
V
f
out
Oscillation frequency 200 kHz

L6571AD013TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi-Volt Half Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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