L6571AD013TR

Pin connection L6571A - L6571B
4/12 Doc ID 4946 Rev 6
2 Pin connection
Figure 2. Pin connection
Table 4. Pin description
N° Pin Description
1 VS Supply input voltage with internal clamp [typ. 15.6V]
2 RF
Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide
current to the external resistor RF connected between pin 2 and 3. Alternatively,
the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to
drive a full H-bridge)
3 CF
Oscillator timing capacitor pin. A capacitor connected between this pin and GND
fixes (together with RF) the oscillating frequency Alternatively an external logic
signal can be applied to the pin to drive the IC.
4 GND Ground
5 LVG
Low side driver output. The output stage can deliver 170mA source and 270mA
sink [typ.values].
6 OUT Upper driver floating reference
7 HVG
High side driver output. The output stage can deliver 170mA source and 270mA
sink [typ.values].
8 BOOT Bootstrap voltage supply. It is the upper driver floating supply.
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L6571A - L6571B Electrical data
Doc ID 4946 Rev 6 5/12
3 Electrical data
V
S
= 12V; V
BOOT
- V
OUT
= 12V; T
j
= 25 °C; unless otherwise specified.
Table 5. Electrical characteristcs
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
V
SUVP
1 VS turn on threshold 8.3 9 9.7 V
V
SUVN
VS turn off threshold 7.3 8 8.7 V
V
SUVH
VS hysteresis 0.7 1 1.3 V
V
CL
VS clamping voltage I
S
= 5 mA 14.6 15.6 16.6 V
I
SU
Start up current V
S
< V
SUVN
150 250 μA
I
q
Quiescent current V
S
> V
SUVP
500 700 μA
I
BOOTLK
8 Leakage current BOOT pin vs GND V
BOOT
= 580V 5 μA
I
OUTLK
6 Leakage current OUT pin vs GND V
OUT
= 562V 5 μA
I
HVG SO
7 High side driver source current V
HVG
= 6V 110 175 mA
I
HVG SI
High side driver sink current V
HVG
= 6V 190 275 mA
I
LVG SO
5 Low side driver source current V
LVG
= 6V 110 175 mA
I
LVG SI
Low side driver sink current V
LVG
= 6V 190 275 mA
V
RFON
2 RF high level output voltage I
RF
=1mA V
S
-0.05 V
S
-0.2 V
V
RF OFF
RF low level output voltage I
RF
= -1mA 50 200 mV
V
CFU
3 CF upper threshold 7.7 8 8.2 V
V
CFL
CF lower threshold 3.80 4 4.3 V
t
d
Internal dead time
L6571A
L6571B
0.85
0.50
1.25
0.72
1.65
0.94
μs
μs
DC
Duty cycle, ratio between dead
Time + conduction time of high
Side and low side drivers
0.45 0.5 0.55
I
AVE
1 Average current from Vs No Load, fs = 60KHz 1.2 1.5 mA
f
out
6 Oscillation frequency RT = 12K; CT = 1nF 57 60 63 kHz
Oscillator frequency L6571A - L6571B
6/12 Doc ID 4946 Rev 6
4 Oscillator frequency
The frequency of the internal oscillator can be programmed using external resistor and
capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Equation 1
Where R
F
and C
F
are the external resistor and capacitor.
The device can be driven in "shut down" condition keeping the C
F
pin close to GND, but
some cares have to be taken:
1. When CF is to GND the high side driver is off and the low side is on
2. The forced discharge of the oscillator capacitor C
F
must not be shorter than 1us: a
simple way to do this is to limit the current discharge with a resistive path imposing
R · C
F
> 1 μs (see fig.1)
Figure 3. Fault signal
Figure 4. Waveforms
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6893

L6571AD013TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi-Volt Half Bridge
Lifecycle:
New from this manufacturer.
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