IXFK21N100Q Datasheet IXFX21N100Q, IXFK21N100Q | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 1000 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C21A

I

DM

T

C

= 25°C, pulse width limited by T

JM

84 A

I

AR

T

C

= 25°C21A

E

AR

T

C

= 25°C60mJ

E

AS

T

C

= 25°C 2.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

10 V/ns

T

J

≤ 150°C, R

G

= 2 Ω

P

D

T

C

= 25°C 500 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.063 in.) from case for 10 s 300 °C

M

d

Mounting torque TO-264 0.4/6 Nm/lb.in.

Weight PLUS 247 6 g

TO-264 10 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 1mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3 5.5 V

I

GSS

V

GS

= ±20 V, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

100 µA

V

GS

= 0 V T

J

= 125°C 2 mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 • I

D25

0.50 Ω

Note 1

DS98677D(10/03)

PLUS 247

TM

(IXFX)

G

D

(TAB)

G = Gate D = Drain

S = Source TAB = Drain

S

G

D

(TAB)

TO-264 AA (IXFK)

HiPerFET

TM

Power MOSFETs

Q-CLASS

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, Low Qg,

High dV/dt, Low t

rr

Features

• IXYS advanced low Q

g

process

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low R

DS (on)

• Rated for unclamped Inductive load

switching (UIS) rated

• Molding epoxies meet UL 94 V-0

flammability classification

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power

supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

Advantages

• PLUS 247

TM

package for clip or spring

mounting

• Space savings

• High power density

IXFK 21N100Q V

DSS

= 1000 V

IXFX 21N100Q I

D25

= 21 A

R

DS(on)

= 0.50

ΩΩ

Ω

t

rr

≤ ≤

≤ 250 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXFK 21N100Q

IXFX 21N100Q

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 20 V; I

D

= 0.5 • I

D25

Note 1 16 22 S

C

iss

6900 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 550 pF

C

rss

90 pF

t

d(on)

21 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

18 ns

t

d(off)

R

G

= 1 Ω (External), 60 ns

t

f

12 ns

Q

g(on)

170 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

38 nC

Q

gd

75 nC

R

thJC

0.26 K/W

R

thCK

0.15 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 21 A

I

SM

Repetitive; 84 A

pulse width limited by T

JM

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

250 ns

Q

RM

1.4 µC

I

RM

8A

I

F

= I

S

,-di/dt = 100 A/µs, V

R

= 100 V

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247

TM

Outline

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

TO-264 AA Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXFK 21N100Q

IXFX 21N100Q

V

GS

- Volts

4.04.55.05.56.06.57.0

I

D

- Amperes

0

5

10

15

20

25

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

4

8

12

16

20

24

T

J

- Degrees C

-25 0 25 50 75 100 125 150

R

DS(ON)

- Normalized

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I

D

- Amperes

0 5 10 15 20 25 30

R

DS(ON)

- Normalized

0.5

1.0

1.5

2.0

2.5

3.0

V

DS

- Volts

0 5 10 15 20 25 30

I

D

- Amperes

0

5

10

15

20

25

30

V

DS

- Volts

0 5 10 15 20 25

I

D

- Amperes

0

10

20

30

40

50

5V

V

GS

= 10V

T

J

= 125

O

C

T

J

= 25

O

C

6V

5V

T

J

= 25

o

C

T

J

= 25

O

C

T

J

= 125

O

C

6V

V

GS

= 10V

9V

8V

7V

V

GS

= 10V

9V

8V

T

J

= 125

o

C

T

J

= -40

o

C

I

D

= 21A

I

D

= 10.5A

V

GS

= 10V

7V

Fig. 1. Output Characteristics at 25

o

C Fig. 2. Output Characteristics at 125

o

C

Fig. 3. R

DS(ON)

vs. Drain Current

Fig. 4. R

DS(ON)

vs. T

J

Fig. 5. Drain Current vs. Case Temperature

Fig. 6. Admittance Curves

IXFK21N100Q

IXFK21N100Q

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