IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXFK 21N100Q
IXFX 21N100Q
V
SD
- Volts
0.2 0.4 0.6 0.8 1.0
I
D
- Amperes
0
5
10
15
20
25
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Z
thJC
- (K/W)
0.001
0.010
0.100
Gate Charge - nC
0 25 50 75 100 125 150 175
V
GS
- Volts
0.0
2.5
5.0
7.5
10.0
V
DS
= 500 V
I
D
= 10.5 A
I
G
= 10 mA
T
J
= 125
o
C
T
J
= 25
o
C
0.300
V
DS
- Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
50
250
500
2500
5000
100
1000
10000
f = 1MHz
Single Pulse
Ciss
Coss
Crss
Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 7. Gate Charge Characteristic Curve Fig. 8. Capacitance Curves
Fig. 10. Thermal Impedance
