2004 Aug 06 3
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PDTC123ES 1 base
2 collector
3 emitter
PDTC123EE 1 base
PDTC123EEF 2 emitter
PDTC123EK 3 collector
PDTC123ET
PDTC123EU
PDTC123EM 1 base
2 emitter
3 collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
1
2
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 06 4
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDTC123EE plastic surface mounted package; 3 leads SOT416
PDTC123EEF plastic surface mounted package; 3 leads SOT490
PDTC123EK plastic surface mounted package; 3 leads SOT346
PDTC123EM leadless ultra small package; 3 solder lands; body 1.0 × 0.6 ×
0.5 mm
SOT883
PDTC123ES plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTC123ET plastic surface mounted package; 3 leads SOT23
PDTC123EU plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 50 V
V
CEO
collector-emitter voltage open base 50 V
V
EBO
emitter-base voltage open collector 10 V
V
I
input voltage
positive +12 V
negative 10 V
I
O
output current (DC) 100 mA
I
CM
peak collector current 100 mA
P
tot
total power dissipation T
amb
25 °C
SOT54 note 1 500 mW
SOT23 note 1 250 mW
SOT346 note 1 250 mW
SOT323 note 1 200 mW
SOT416 note 1 150 mW
SOT490 notes 1 and 2 250 mW
SOT883 notes 2 and 3 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C
2004 Aug 06 5
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 A 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 A 1 μA
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A 2 mA
h
FE
DC current gain V
CE
= 5 V; I
C
= 20 mA 30
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA 150 mV
V
i(off)
input-off voltage I
C
= 1 mA; V
CE
= 5 V 1.2 0.5 V
V
i(on)
input-on voltage I
C
= 20 mA; V
CE
= 0.3 V 2 1.6 V
R1 input resistor 1.54 2.2 2.86 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f
= 1 MHz
2.5 pF
R2
R1
--------

PDTC123EEF,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS NPN 250MW SC89
Lifecycle:
New from this manufacturer.
Delivery:
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