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DMHC4035LSD-13

P1-P3P4-P6P7-P9
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
1 of 9
www.diodes.com
January 2014
Β© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25Β°C
N-Channel 40V
45mξ‚Ÿ @ V
GS
= 10V
4.5A
58mξ‚Ÿ @ V
GS
= 4.5V
4A
P-Channel -40V
65mξ‚Ÿ @ V
GS
= -10V
-3.7A
100mξ‚Ÿ @ V
GS
= -4.5V
-2.9A
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
β€’ DC Motor Control
β€’ DC-AC Inverters
Features
β€’ 2 x N + 2 x P channels in a SOIC package
β€’ Low On-Resistance
β€’ Low Input Capacitance
β€’ Fast Switching Speed
β€’ Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
β€’ Halogen and Antimony Free. β€œGreen” Device (Note 3)
β€’ Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
β€’ Case: SO-8
β€’ Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
β€’ Moisture Sensitivity: Level 1 per J-STD-020
β€’ Terminal Connections Indicator: See diagram
β€’ Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
β€’ Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Internal Schematic
Top View
Pin Configuration
SO-8
H-Bridge
P1G
P1S/P2S
N2D/P2D
P2G N2G
N1S/N2S
N1D/P1D
N1G
1
4
8
5
C
4
03
5
L
S
Y
Y W
W
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
2 of 9
www.diodes.com
January 2014
Β© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Thermal Characteristics (@T
A
= +25Β°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
ΞΈ
JA
85
Β°C/W
t<10s 53
Thermal Resistance, Junction to Case
R
ΞΈ
JC
15
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 Β°C
Maximum Ratings N-CHANNEL (@T
A
= +25Β°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
Β±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25Β°C
T
A
= +70Β°C
I
D
4.5
3.5
A
t<10s
T
A
= +25Β°C
T
A
= +70Β°C
I
D
5.8
4.5
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25Β°C
T
A
= +70Β°C
I
D
4
3.1
A
t<10s
T
A
= +25Β°C
T
A
= +70Β°C
I
D
5.1
4
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
1.5
A
Pulsed Drain Current (10Β΅s pulse, duty cycle = 1%)
I
DM
25
A
Maximum Ratings P-CHANNEL (@T
A
= +25Β°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-40 V
Gate-Source Voltage
V
GSS
Β±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25Β°C
T
A
= +70Β°C
I
D
-3.7
-2.9
A
t<10s
T
A
= +25Β°C
T
A
= +70Β°C
I
D
-4.8
-3.8
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25Β°C
T
A
= +70Β°C
I
D
-2.9
-2.3
A
t<10s
T
A
= +25Β°C
T
A
= +70Β°C
I
D
-3.9
-3.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-1.5
A
Pulsed Drain Current (10Β΅s pulse, duty cycle = 1%)
I
DM
-15
A
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
3 of 9
www.diodes.com
January 2014
Β© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics N-CHANNEL (@T
A
= +25Β°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
40
β€” β€”
V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
β€” β€”
1 A
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
β€” β€”
Β±100 nA
V
GS
= Β±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 β€” 3 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
β€”
26 45
m
V
GS
= 10V, I
D
= 3.9A
β€”
35 58
V
GS
= 4.5V, I
D
= 3.5A
Diode Forward Voltage
V
SD
β€”
0.7 1 V
V
GS
= 0V, I
S
= 1.25A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
β€” 574
β€”
pF
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
β€”
87.8
β€”
Reverse Transfer Capacitance
C
rss
β€”
38.7
β€”
Gate resistance
R
g
β€”
1.6
β€”

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
β€”
5.9
β€”
nC
V
DS
= 20V, I
D
= 3.9A
Total Gate Charge (V
GS
= 10V) Q
g
β€”
12.5
β€”
Gate-Source Charge
Q
gs
β€”
1.7
β€”
Gate-Drain Charge
Q
gd
β€”
2.2
β€”
Turn-On Delay Time
t
D(on)
β€”
3.1
β€”
ns
V
DD
= 20V, V
GS
= 10V,
R
L
= 20, R
G
= 6,
Turn-On Rise Time
t
r
β€”
2.6
β€”
Turn-Off Delay Time
t
D(off)
β€”
15
β€”
Turn-Off Fall Time
t
f
β€”
5.5
β€”
Reverse Recovery Time
t
rr
β€”
6.5
β€”
ns
I
F
= 3.9A, di/dt = 500A/s
Reverse Recovery Charge
Q
rr
β€”
1.2
β€”
nC
Electrical Characteristics P-CHANNEL (@T
A
= +25Β°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-40
β€”
β€” V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
β€” β€”
-1 A
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
β€” β€”
Β±100 nA
V
GS
= Β±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1 β€” -3 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
β€”
49 65
m
V
GS
= -10V, I
D
= -4.2A
β€”
73 100
V
GS
= -4.5V, I
D
= -3.3A
Diode Forward Voltage
V
SD
β€”
-0.7 -1.2 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
β€”
587
β€”
pF
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
β€”
88.1
β€”
pF
Reverse Transfer Capacitance
C
rss
β€”
40.2
β€”
pF
Gate resistance
R
g
β€”
12.3
β€”

V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
β€”
5.4
β€”
nC
V
DS
= -20V, I
D
= -4.2A
Total Gate Charge (V
GS
= -10V) Q
g
β€”
11.1
β€”
nC
Gate-Source Charge
Q
gs
β€”
1.5
β€”
nC
Gate-Drain Charge
Q
gd
β€”
2
β€”
nC
Turn-On Delay Time
t
D(on)
β€”
3.6
β€”
ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6, I
D
= -1A
Turn-On Rise Time
t
r
β€”
2.9
β€”
ns
Turn-Off Delay Time
t
D(off)
β€”
36.3
β€”
ns
Turn-Off Fall Time
t
f
β€”
15.3
β€”
ns
Reverse Recovery Time
t
rr
β€”
15.5
β€”
ns
I
F
= -4.2A, di/dt = 500A/s
Reverse Recovery Charge
Q
rr
β€”
16.9
β€”
nC
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMHC4035LSD-13

Mfr. #:
Buy DMHC4035LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Comp H-Bridge ENH FET 20VGS
Lifecycle:
New from this manufacturer.
Delivery:
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