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DMHC4035LSD-13

P1-P3P4-P6P7-P9
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
4 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Typical Characteristics - N-CHANNEL
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
AI
E
(A)
D
20
012345
18
16
14
12
10
8
6
4
2
0
V= 2.5V
GS
V= 3.0V
GS
V= 4.0V
GS
V= 4.5V
GS
V= 5.0V
GS
V= 2.3V
GS
V= 3.5V
GS
V= 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0 2 4 6 8 10 12 14 16 18 20
V = 4.5V
GS
V = 10V
GS
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
02468101214161820
I = 3.9A
D
I = 3.5A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 2 4 6 8 101214161820
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V=5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
5 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
V=5V
I= 5A
GS
D
V=V
I= 10A
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
A
E
ES
LD V
L
A
E (V)
GS(th)
0.5
1
1.5
2
2.5
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
E
EN
(A)
S
T= 85°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 125°C
A
T = 150°C
A
T= 25°C
A
T = -55°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
, J
N
I
N
A
A
I
AN
E (pF)
T
10
100
1000
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
A
E
ES
LD V
L
A
E (V)
GS
0
2
4
6
8
10
02468101214
V = 20V
I= A
DS
D
3.9
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I, D
AIN
EN
(A)
D
0.01
0.1
1
10
100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
6 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMHC4035LSD
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Typical Characteristics - P-CHANNEL
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristics
DS
-I , D
AIN
EN
(A)
D
15
012345
12
3
0
9
6
V = -2.0V
GS
V= -3.0V
GS
V= -3.5V
GS
V= -10V
GS
V = -5.0V
GS
V = -2.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 14 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
3
6
9
12
15
012345
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 2 4 6 8 101214161820
V = -4.5V
GS
V = -10V
GS
-V , GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristics
GS
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 2 4 6 8 101214161820
I = -4.2A
D
I = -3.3A
D
-I , DRAIN SOURCE CURRENT (A)
Figure 17 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 3 6 9 12 15
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125C
A
°
T = 150C
A
°
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 18 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V = -5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
P1-P3P4-P6P7-P9

DMHC4035LSD-13

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Buy DMHC4035LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Comp H-Bridge ENH FET 20VGS
Lifecycle:
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