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IRF1010NSPBF
P1-P3
P4-P6
P7-P9
P10-P11
IRF1010NS/LPbF
www.irf.com
7
Peak Diode Recovery dv/dt
Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt
controlled by
R
G
•
I
SD
controlled
by Duty
Factor "D"
•
D.U.T. -
Device Under
Test
D.U.T
*
Circuit
Layout
Considerations
•
Low Stray
Inductance
•
Ground Plane
•
Low
Leakage Inductance
Current Transformer
*
Reverse Polarity
of D.U.T
for P-Channel
V
GS
[ ]
[ ]
***
V
GS
= 5.0V
for Logic
Level and
3V Drive Devices
[ ] ***
Fig 14.
For N-channel
HEXFET
®
power MOSFETs
IRF1010NS/LPbF
8
www.irf.com
N
ote: "P
" in
as
s
em
bly lin
e
p
o
s
iti
o
n
i
n
d
i
cate
s
"L
ea
d
-
F
r
ee"
F5
3
0
S
T
H
IS
IS
AN
IR
F
5
30
S
W
IT
H
L
OT
CO
DE
8024
AS
S
E
M
B
L
E
D
ON
W
W 0
2, 20
00
I
N TH
E
A
S
S
E
MBLY LI
N
E
"
L"
A
SSEM
BL
Y
LO
T C
O
D
E
IN
T
E
R
N
AT
IO
N
AL
R
E
CT
IF
IE
R
LO
G
O
PA
RT
NUMBE
R
DA
T
E
CO
DE
YE
AR
0 =
20
00
WE
E
K
02
LI
NE L
OR
F
530S
A
=
A
S
SEM
B
L
Y
SI
TE C
O
D
E
W
EEK 0
2
P =
DES
I
GNA
T
E
S
LE
A
D-
F
R
E
E
PRO
DUC
T
(
O
P
T
I
O
N
A
L)
REC
TI
FI
E
R
IN
T E
R
N
A
T
I
O
N
A
L
LO
G
O
LO
T
C
O
DE
AS S
E
M
B
L
Y
YE
AR
0 = 2000
DA
T
E
C
ODE
PA
R
T
NU
MBE
R
D
2
Pak
Part
Marking
Information
(Lead-Free)
D
2
Pak
Package
Outline
Dimensions are shown in millimeters (inches)
IRF1010NS/LPbF
www.irf.com
9
AS S
E
MB L
Y
LO
T C
O
D
E
REC
T
IF
IER
INT
E
R
NA
T
IO
N
A
L
A
S
S
E
M
B
L
E
D O
N W
W
19, 199
7
Not
e: "P
" i
n a
s
s
e
m
b
l
y li
ne
pos
i
ti
on i
ndi
ca
te
s
"L
ea
d-F
r
e
e"
I
N
T
HE A
SS
EM
BLY
LI
N
E "
C
"
LO
G
O
T
H
IS
IS
A
N IRL
31
03L
L
O
T
C
OD
E
1789
E X AMP
L E :
LI
N
E
C
DA
T
E
C
ODE
W
EEK 1
9
YE
A
R
7 = 1997
PA
R
T
NU
M
B
E
R
PA
RT
N
UM
B
ER
LO
G
O
LO
T C
O
D
E
A
SSE
M
BL
Y
INT
E
R
N
A
T
I
O
NA
L
R
E
C
T
IF
IE
R
PR
O
DUC
T
(O
P
T
I
O
NA
L)
P = DES
IG
NA
T
E
S
L
E
A
D-F
R
E
E
A
=
A
SSE
M
BL
Y
SI
TE
C
O
D
E
WE
E
K
1
9
YE
A
R 7 = 1997
DA
T
E
C
O
DE
OR
TO-262 Part Marking Information
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
P1-P3
P4-P6
P7-P9
P10-P11
IRF1010NSPBF
Mfr. #:
Buy IRF1010NSPBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC
Lifecycle:
New from this manufacturer.
Delivery:
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