Philips Semiconductors
BSH114
N-channel enhancement mode field effect transistor
Product specification Rev. 01 — 09 November 2000 5 of 13
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 100 130 − V
T
j
= −55 °C95−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 234V
T
j
= 150 °C 1.2 −−V
T
j
= −55 °C −−6V
I
DSS
drain-source leakage current V
DS
= 100 V; V
GS
=0V
T
j
=25°C − 125µA
T
j
= 150 °C − 4 250 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0V − 10 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 0.5 A; Figure 7 and 8
T
j
=25°C − 400 500 mΩ
T
j
= 150 °C −−1.15 Ω
Dynamic characteristics
g
fs
forward transconductance V
DS
=20V; I
D
= 0.5 A; Figure 11 0.5 1.2 − S
Q
g(tot)
total gate charge I
D
= 0.5 A; V
DD
=80V; V
GS
=10V;Figure 14 − 4.6 − nC
Q
gs
gate-source charge − 0.8 − nC
Q
gd
gate-drain (Miller) charge − 2.1 − nC
C
iss
input capacitance V
GS
=0V; V
DD
= 25 V; f = 1 MHz; Figure 12 − 138 − pF
C
oss
output capacitance − 21 − pF
C
rss
reverse transfer capacitance − 12 − pF
t
d(on)
turn-on delay time V
DD
=50V; R
D
= 100 Ω; V
GS
=10V;R
G
=6Ω− 6 − ns
t
r
rise time − 13 − ns
t
d(off)
turn-off delay time − 8 − ns
t
f
fall time − 5 − ns
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 0.85 A; V
GS
=0V;Figure 13 − 0.84 1 V
t
rr
reverse recovery time I
S
= 0.5 A; dI
S
/dt = −100 A/µs;
V
GS
=0V;V
DS
=30V
− 24 − ns
Q
r
recovered charge − 37 − nC
