Philips Semiconductors
BSH114
N-channel enhancement mode field effect transistor
Product specification Rev. 01 — 09 November 2000 6 of 13
9397 750 07708
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
xR
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac56
0
1
2
3
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
5.8 V
5.6 V
5.4 V
5.2 V
5.0 V
4.8 V
6 V
V
GS
= 10 V
7 V
T
j
= 25 ºC
03ac58
0
1
2
3
02468
V
GS
(V)
I
D
(A)
T
j
= 25 ºCT
j
= 150 ºC
V
DS
> I
D
X R
DSon
03ac57
0
1
2
3
01234
I
D
(A)
R
DSon
(Ω)
5.8 V
V
GS
= 4.8 V
5.0 V
5.2 V
5.4 V
5.6 V
7 V
10 V
6 V
T
j
= 25 ºC
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
