Nexperia
BAS321J
High-voltage switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
- 250 V
V
R
reverse voltage - 200 V
I
F
forward current [1] - 250 mA
t
p
= 50 µs; T
j(init)
= 25 °C; square wave - 13 A
t
p
= 100 µs; T
j(init)
= 25 °C; square wave - 9 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; square wave - 3 A
I
FRM
repetitive peak forward
current
t
p
≤ 0.5 ms; δ ≤ 0.25 - 625 mA
[1] - 420 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 660 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 300 K/WR
th(j-a)
thermal resistance
from junction to
ambient
[2] - - 190 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[3] - - 40 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Soldering point of cathode tab.
BAS321J All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 23 March 2018 3 / 12
