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BAS321JF
P1-P3
P4-P6
P7-P9
P10-P12
Nexperia
BAS321J
High-voltage switching diode
aaa-028256
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.33
0.25
0.05
0.10
0.20
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 1.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-028157
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.50
0.33
0.25
0.05
0.10
0.20
0.02
0.01
0
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 2.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS321J
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
23 March 2018
4 / 12
Nexperia
BAS321J
High-voltage switching diode
10. Characteristics
T
able 7. Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
-
1
V
V
F
forward voltage
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
-
1.25
V
V
R
= 200 V; pulsed; T
j
= 25 °C
-
-
100
nA
I
R
reverse current
V
R
= 200 V; pulsed; T
j
= 150 °C
-
-
100
µA
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; T
j
= 25 °C
-
-
2
pF
t
rr
reverse recovery time
I
F
= 30 mA; I
R
= 30 mA; R
L
= 100 Ω;
I
R(meas)
= 3 mA; T
j
= 25 °C
-
-
50
ns
V
F
(V)
0
2.0
1.5
0.5
1.0
aaa-028258
0.2
0.3
0.1
0.4
0.5
I
F
(A)
0
(1)
(4)
(3)
(2)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 3.
Forward current as a function of forward
voltage; typical values; (linear scale)
aaa-028259
10
-2
10
-3
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0
1.75
1.25
1.50
1.00
0.75
0.25
0.50
(1)
(2)
(3)
(4)
(1) T
j
= 150° C
(2) T
j
= 85° C
(3) T
j
= 25° C
(4) T
j
= -40° C
Fig. 4.
Forward current as a function of forward
voltage; typical values; (logarithmic scale)
BAS321J
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
23 March 2018
5 / 12
Nexperia
BAS321J
High-voltage switching diode
aaa-028260
V
R
(V)
0
120
160
200
40
80
10
-4
I
R
(A)
10
-1
1
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
(1)
(2)
(3)
(4)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 5.
Reverse current as a function of reverse
voltage; typical values
V
R
(V)
0
10
8
4
6
2
aaa-028261
0.2
0.4
0.6
C
d
(pF)
0
f = 1 MHz
T
j
= 25 °C.
Fig. 6.
Diode capacitance as a function of reverse
voltage; typical values.
aaa-028262
t
p
(ms)
10
-2
10
1
10
-1
10
10
2
I
FSM
(A)
1
Based on square wave currents
T
j(init)
= 25 °C prior to surge
Fig. 7.
Non-repetitive peak forward current as a function of pulse duration; maximum value
BAS321J
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V
. 2018. All rights reserved
Product data sheet
23 March 2018
6 / 12
P1-P3
P4-P6
P7-P9
P10-P12
BAS321JF
Mfr. #:
Buy BAS321JF
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching BAS321J SOD2
Lifecycle:
New from this manufacturer.
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