AON7611
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
1.5 2 2.5 V
I
D(ON)
20 A
40 50
T
J
=125°C 64 80
53 70 mΩ
g
FS
11 S
V
SD
0.79 1 V
I
S
9.5 A
C
iss
170 pF
C
oss
35 pF
C
rss
23 pF
R
g
1.7 3.5 5.3 Ω
Q
g
(10V) 4.05 10 nC
Q
g
(4.5V) 2 6 nC
Q
gs
0.55 nC
Q
gd
1 nC
t
D(on)
4.5 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=4A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=4A
V
GS
=4.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
N-channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=4A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
r
t
D(off)
18.5 ns
t
f
15.5 ns
t
rr
7.5 ns
Q
rr
2.5
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=4A, dI/dt=100A/µs
Turn-Off DelayTime
GS
DS
L
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=4A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Dec 2011 www.aosmd.com Page 2 of 11
