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AON7611
P1-P3
P4-P6
P7-P9
P10-P11
AON7611
P-channel TYPICA
L ELECTRICAL A
ND THERMAL CHA
RA
CTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
0
25
50
75
100
12
5
150
Power Dissipation (W)
T
CASE
(°
C)
Figure 12: Power De-ra
ting (Note F
)
0
4
8
12
16
20
0
25
50
75
10
0
125
150
Current rating I
D
(A
)
T
CASE
(°
C)
Figure 13: Current De
-rating (Note
F)
1
10
100
1000
10000
0.00001
0.001
0.1
10
1000
Power (W)
Pulse Width (s)
Figure 14: Single Pul
se Power Ratin
g Junction
-
to
-
A
m
bient
(Note
H)
T
A
=25
°
C
40
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100
0
Z
θ
θ
θ
θ
JA
Normalized T
ransient
Thermal Resistanc
e
Pulse Width (s)
Figure 15: Normalize
d Ma
ximum Transient Therma
l Impedance
(Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
T
on
T
P
D
In descend
ing order
D=0.5, 0.3, 0.1, 0
.05, 0.02, 0.01
, single puls
e
Figure 14: Single Pul
se Power Ratin
g Junction
-
to
-
A
m
bient
(Note
H)
R
θ
JA
=85
°
C/W
Rev 1: Dec 2011
www.aosmd.com
Page 10 of 11
AON761
1
VD
C
Ig
V
d
s
D
U
T
VD
C
V
g
s
V
g
s
Q
g
Q
g
s
Q
g
d
C
h
a
rg
e
G
a
t
e
C
h
a
r
g
e
T
e
s
t
C
ir
c
u
it
&
W
a
v
e
fo
r
m
-
+
-
+
-1
0
V
V
D
C
D
U
T
V
d
d
V
g
s
V
d
s
V
g
s
R
L
R
g
R
e
s
i
s
t
i
v
e
S
w
i
t
c
h
i
n
g
T
e
s
t
C
i
r
c
u
i
t
&
W a
v
e
f
o
r
m
s
-
+
V
g
s
V
d
s
t
t
t
t
t
t
9
0
%
1
0
%
r
o
n
d
(
o ff)
f
o
ff
d
(
o n
)
Id
Vd
s
Unc
la
mpe
d
Ind
uct
ive
Sw
itch
ing
(U
IS
) Te
st
Cir
cu
it &
W
avef
or
ms
Vds
L
-
2
E =
1/2
LI
AR
AR
BV
DSS
I
g
V
g
s
-
+
V
D
C
D
U
T
L
V
g
s
I
s
d
D
i
o
d
e
R
e
c
o
v
e
r
y
T
e
s
t
C
i
r
c
u
i
t
&
W
a
v
e
fo
r
m
s
V
d
s
-
V
d
s
+
d
I
/d
t
R
M
r
r
V
d
d
V
d
d
Q
=
-
I
d
t
t
rr
-
I
s
d
-
V
d
s
F
-
I
-
I
Vd
d
Vgs
Vgs
Rg
DUT
VDC
Vgs
Id
Vgs
-
+
BV
DSS
I
AR
Rev
1: Dec 2011
www.aosmd.com
Page 11 of 11
P1-P3
P4-P6
P7-P9
P10-P11
AON7611
Mfr. #:
Buy AON7611
Manufacturer:
Description:
MOSFET N/P-CH 30V 9A/18.5A 8DFN
Lifecycle:
New from this manufacturer.
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AON7611