LTC3113
3
3113f
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3113 is tested under pulsed load conditions such that
T
J
≈ T
A
. The LTC3113E is guaranteed to meet performance specifi cations
from 0°C to 85°C junction temperature. Specifi cations over the
–40°C to 125°C operating temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3113I is guaranteed to meet performance specifi cations over the
–40°C to 125°C operating junction temperature range.
ELECTRICAL CHARACTERISTICS
The l denotes specifi cations which apply over the full junction temperature
range, otherwise specifi cations are at T
A
= 25°C (Note 2). V
IN
= 3.3V, V
OUT
= 3.8V unless otherwise noted.
PARAMETER CONDITION MIN TYP MAX UNITS
Input Operating Range
l
1.8 5.5 V
Output Voltage Adjust Range
l
1.8 5.5 V
Feedback Voltage V
BURST
= 0V
l
588 600 612 mV
Feedback Input Current V
FB
= 0.7V
050 nA
Quiescent Current–Burst Mode Operation V
BURST
= 3.3V
40 55 μA
Quiescent Current–Shutdown V
OUT
= 0V, V
RUN
= 0V, Not Including Switch Leakage
0.1 1 μA
Quiescent Current–Active V
FB
= 0.7V, V
BURST
= 0V, R
T
= 90.9k
300 500 μA
Input Current Limit
l
5.8 7.8 9.8 A
Peak Current Limit 6.5 11.1 16.0 A
Burst Mode Peak Current Limit 0.9 1.9 2.9 A
Reverse Current Limit –1.6 –1 –0.4 A
NMOS Switch Leakage Switch B, SW1 = 5.5V, V
IN
= 5.5V, V
OUT
= 5.5V
Switch C, SW2 = 5.5V, V
IN
= 5.5V, V
OUT
= 5.5V
0.01
0.01
10
10
μA
μA
PMOS Switch Leakage Switch A, V
IN
= 5.5V, V
OUT
= 5.5V, SW1 = 0V
Switch D, V
IN
= 5.5V, V
OUT
= 5.5V, SW2 = 0V
0.01
0.01
20
20
μA
μA
NMOS Switch On-Resistance Switch B, V
OUT
= 3.8V
Switch C, V
OUT
= 3.8V
25
35
mΩ
mΩ
PMOS Switch On-Resistance Switch A, V
IN
= 3.3V
Switch D, V
OUT
= 3.8V
30
40
mΩ
mΩ
Maximum Duty Cycle Boost (% Switch C On)
Buck (% Switch A On)
l
l
80
100
90 %
%
Minimum Duty Cycle
l
0%
Frequency Accuracy R
T
= 90.9k
l
0.8 1 1.2 MHz
Error Amp AVOL
100 dB
Error Amp Source Current V
C
= 0V, V
FB
= 0V
500 μA
Error Amp Sink Current V
C
= 1.2V, V
FB
= 0.7V
160 μA
BURST Input Logic Threshold
l
0.3 0.7 1.2 V
BURST Input Current V
BURST
= 5.5V
01 μA
RUN Input Logic Threshold
l
0.3 0.7 1.2 V
RUN Input Current V
RUN
= 5.5V
01 μA
Soft-Start Time 2ms
Note 3: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when the protection is active.
Continuous operation above the specifi ed absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 4: Voltage transients on the switch pins beyond the DC limit specifi ed
in the absolute maximum ratings are non-disruptive to normal operation
when using good layout practices, as shown on the demo board or
described in the data sheet and application notes.
Note 5: The junction temperature (T
J
in °C) is calculated from the ambient
temperature (T
A
in °C) and the power dissipation (P
D
in Watts) as follows:
T
J
= T
A
+ (P
D
) • (θ
JA
°C/W)
