EV1HMC1131LC4 Datasheet HMC1131LC4, EV1HMC1131LC4 | P4-P6

Data Sheet HMC1131

Rev. A | Page 3 of 14

ELECTRICAL SPECIFICATIONS

24 GHz TO 27 GHz FREQUENCY RANGE

T

A

= 25°C, V

DD

1 = V

DD

2 = V

DD

3 = V

DD

4 = 5 V, I

DD

= 225 mA, unless otherwise stated. Adjust V

GG

1 and V

GG

2 between −2 V to 0 V to

achieve I

DD

= 225 mA typical.

Table 1.

Parameter Symbol Min Typ Max Unit

FREQUENCY RANGE 24 27 GHz

GAIN 18 22 dB

Gain Variation Over Temperature 0.031 dB/°C

RETURN LOSS

Input 8 dB

Output 7 dB

OUTPUT

Output Power for 1 dB Compression P1dB 20 23 dBm

Saturated Output Power P

SAT

27 dBm

Output Third-Order Intercept

1

IP3 34 dBm

SUPPLY CURRENT

Total Supply Current I

DD

225 mA

Total Supply Current vs. V

DD

2

4 V

5 V

1

Measurement taken at P

OUT

/tone = 10 dBm.

2

The amplifier operates over the full voltage ranges shown. V

GG

1 and V

GG

2 are adjusted to achieve I

DD

= 225 mA at 5 V.

27 GHz TO 35 GHz FREQUENCY RANGE

T

A

= 25°C, V

DD

1 = V

DD

2 = V

DD

3 = V

DD

4 = 5 V, I

DD

= 225 mA, unless otherwise stated. Adjust V

GG

1 and V

GG

2 between −2 V to 0 V to

achieve I

DD

= 225 mA typical.

Table 2.

Parameter Symbol Min Typ Max Unit

FREQUENCY RANGE 27 35 GHz

GAIN 18 20 dB

Gain Variation Over Temperature 0.031 dB/°C

RETURN LOSS

Input 8 dB

Output 7 dB

OUTPUT

Output Power for 1 dB Compression P1dB 21 24 dBm

Saturated Output Power P

SAT

25 dBm

Output Third-Order Intercept

1

IP3 35 dBm

SUPPLY CURRENT

Total Supply Current I

DD

225 mA

Total Supply Current vs. V

DD

2

4 V

5 V

1

Measurement taken at P

OUT

/tone = 10 dBm.

2

The amplifier operates over the full voltage ranges shown. V

GG

1 and V

GG

2 are adjusted to achieve I

DD

= 225 mA at 5 V.

HMC1131 Data Sheet

Rev. A | Page 4 of 14

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

Drain Bias Voltage (V

DD

) 5.5 V

RF Input Power (RFIN) 12 dBm

Channel Temperature 175°C

Continuous Power Dissipation (P

DISS

),

T

A

= 85°C (Derate 22 mW/°C)

1.97 W

Thermal Resistance, R

TH

(Junction to

Ground Paddle)

45.5°C/W

Operating Temperature −40°C to +85°C

Storage Temperature −65°C to +150°C

ESD Sensitivity, Human Body Model (HBM) Class 0,

passed 150 V

Maximum Peak Reflow Temperature 260°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

ESD CAUTION

Data Sheet HMC1131

Rev. A | Page 5 of 14

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

1

NIC

2

GND

3

RFIN

4

GND

5

NIC

6

NIC

18

NIC

17

GND

16

RFOUT

15

GND

14

NIC

13

NIC

24

NIC

23

V

DD

1

22

V

DD

2

21

V

DD

3

20

V

DD

4

19

NIC

7

NIC

8

V

GG

1

9

NIC

10

NIC

11

V

GG

2

12

NIC

HMC1131

TOP VIEW

(Not to Scale)

NOTES

1. NIC = NOT INTERNALLY CONNECTED.

2. THE EXPOSED PAD MUST BE CONNECTED

TO RF/DC GROUND.

13105-100

Figure 2. Pin Configuration

Table 4. Pin Function Descriptions

Pin No. Mnemonic Description

1, 5 to 7, 9, 10, 12 to 14,

18, 19, 24

NIC

Not Internally Connected. However, all data was measured with these pins connected to RF/dc

ground externally.

2, 4, 15, 17 GND Ground. These pins must be connected to RF/dc ground.

3 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω.

8 V

GG

1

Gate Bias Pin for the First and Second Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF

are required for this pin.

11 V

GG

2

Gate Bias Pin for the Third and Fourth Stages. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF

are required for this pin.

16 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω.

20 to 23 V

DD

4 to V

DD

1

Drain Bias Voltage Pins. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required for

these pins.

EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.

EV1HMC1131LC4

EV1HMC1131LC4

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