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PTFB192503FL-V2-R0

P1-P3P4-P6P7-P9P10-P12P13-P14
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12
PTFB192503FL
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Wolfspeed
test fixture)
V
DD
= 30 V, I
DQ
= 1.9 A, P
OUT
= 50 W average, ƒ
1
= 1980 MHz, ƒ
2
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
— 19 — dB
Drain Efficiency
hD — 28 — %
Intermodulation Distortion IMD — –35 — dBc
Thermally-Enhanced High Power RF LDMOS FET
240 W, 1930 – 1990 MHz
Description
The PTFB192503FL is a 240-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1930
to 1990 MHz frequency band. Features include input and output
matching, high gain, wide signal bandwidth and reduced memory
effects for improved DPD correctability. Manufactured with Wolf-
speed's advanced LDMOS process, this device provides excel-
lent thermal performance and superior reliability.
Features
• Broadbandinternalinputandoutputmatching
• EnhancedforuseinDPDerrorcorrectionsystems
• Typicaltwo-carrierWCDMAperformance,30V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• TypicalCWperformance,1990MHz,30V
- Output power at P
1dB
= 240 W
- Efficiency = 55%
• Increasednegativegate-sourcevoltagerangefor
improved performance in Doherty peaking
amplifiers
• IntegratedESDprotection.HumanBodyModel,
Class 2 (minimum)
• Capableofhandling10:1VSWR@30V,240W
(CW) output power
• Pb-free,RoHS-compliant
PTFB192503FL
Package H-34288-4/2
0
10
20
30
40
50
15
16
17
18
19
20
33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
Efficiency
Gain
2
PTFB192503FL
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 10, 2018-06-12
RF Characteristics (cont.)
Two-tone Measurements (tested in Wolfspeed test fixture)
V
DD
= 30 V, I
DQ
= 1.9 A, P
OUT
= 220 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17 18 — dB
Drain Efficiency
hD 40 41.5 — %
Intermodulation Distortion IMD — –29 –27 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1.0 µA
Drain Leakage Current V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-StateResistance V
GS
= 10 V, V
DS
=0.1V R
DS(on)
— 0.03 — W
Operating Gate Voltage V
DS
= 30 V, I
DQ
= 1.9 A V
GS
2.3 2.8 3.3 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Junction Temperature T
J
200 °C
StorageTemperatureRange T
STG
–40 to +150 °C
ThermalResistance(T
CASE
=70°C,200WCW) R
qJC
0.262 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFB192503FLV2R0 PTFB192503FL-V2-R0 H-34288-4/2,earless Tape&Reel,50pcs
PTFB192503FLV2R250 PTFB192503FL-V2-R250 H-34288-4/2,earless Tape&Reel,250pcs
3
PTFB192503FL
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 010, 2018-06-01
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 10, 2018-06-12
Typical Performance (data taken in a production test fixture)
-60
-55
-50
-45
-40
-35
-30
-25
33 35 37 39 41 43 45 47 49
IMD (dBc)
Output Power (dBm)
1990 Lower
1990 Upper
1960 Lower
1960 Upper
1930 Lower
1930 Upper
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
Efficiency
IMD Up
IMD Low
ACPR
5
15
25
35
45
55
65
14
15
16
17
18
19
20
38 40 42 44 46 48 50 52 54
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
Efficiency
Gain
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
15
20
25
30
35
40
45
50
55
60
1890 1920 1950 1980 2010
Frequency (MHz)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 110 W
Gain
Efficiency
RL
IMD3
Gain (dB) / Efficiency (%)
Return Loss (dB), IMD (dBc)
P1-P3P4-P6P7-P9P10-P12P13-P14

PTFB192503FL-V2-R0

Mfr. #:
Buy PTFB192503FL-V2-R0
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
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