Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PTFB192503FL-V2-R0
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 10, 2018-06-12
4
P
TFB192503FL
T
ypical Perf
ormance
(cont.)
0
5
10
15
20
25
30
35
40
45
-65
-60
-
55
-50
-45
-40
-35
-30
-25
-20
37
39
41
43
45
47
49
51
53
55
Ef
f
ic
iency (%)
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
T
w
o-
t
one
Dr
i
ve-
up
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 1990
M
H
z, ƒ
2
= 1989
M
H
z
Ef
f
ic
iency
IM
D 3
0
10
20
30
40
50
15
16
17
18
19
20
37
39
41
43
45
47
49
51
53
55
Ef
f
ic
iency (%)
G
ain (dB)
O
utput Pow
er,
PE
P (dB
m
)
T
w
o-
t
one
Dr
i
ve-
up
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 1990
M
H
z, ƒ
2
= 1989
M
H
z
Ef
f
ic
iency
G
ain
-60
-50
-40
-30
-20
35
40
45
50
55
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
T
w
o-
t
one
Dr
i
ve-
up
at
Sel
ect
ed
Fr
equencies
V
DD
= 30 V
,
I
DQ
= 1.85
A,
Tone
Spac
ing
= 1
M
H
z
1930
MHz
1960
MHz
1990
MHz
IM
D
3
-40
-35
-30
-25
-20
-15
10
20
30
40
50
60
22
24
26
28
30
32
34
3rd O
rder IM
D (
dBc
)
Supply
Voltage
(V)
T
w
o-
t
one
Vol
t
age
Sw
eep
I
DQ
= 1.85
A
, ƒ
1
= 1990
M
H
z,
ƒ
2
= 1989
M
H
z
O
utput Pow
er
= 53.3
dBm
Ef
f
ic
iency
G
ain
IM
D
3
G
ain (dB) /
Ef
f
ic
iency (%)
5
P
TFB192503FL
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 010, 2018-06-01
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 10, 2018-06-12
T
ypical Perf
ormance
(cont.)
0
10
20
30
40
50
60
15
16
17
18
19
20
21
40
45
50
55
D
rain Ef
f
ic
ienc
y (%)
G
ain (dB)
O
utput Pow
er
(dBm
)
CW
Gai
n &
Ef
f
i
ci
ency vs.
O
ut
put Pow
er
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ =
1990
M
H
z
+
85
°
C
+
25
°
C
–10
°
C
Ef
f
ic
iency
G
ain
17
18
19
20
40
45
50
55
Pow
er G
ain
(dB)
O
utput Pow
er
(dBm
)
CW
Per
f
or
m
ance
Gai
n v
s. Out
put
Pow
er
V
DD
= 30 V
,
ƒ = 1990
M
H
z
I
DQ
= 1.85
A
I
DQ
= 2.5
A
I
DQ
= 1.2
A
-70
-60
-50
-40
-30
-20
35
40
45
50
55
IM
D (dBc
)
O
utput Pow
er,
PE
P (dB
m
)
Int
erm
odul
at
i
on
Di
st
or
t
i
on
vs. Out
put Pow
er
V
DD
= 30 V
,
I
DQ
= 1.85
A,
ƒ
1
= 1990
M
H
z, ƒ
2
= 1989
M
H
z
IM
D
3
IM
D
7
IM
D
5
4600 Silicon Drive | Durham, NC 27703 | www
.wolfspeed.c
om
Rev
. 10, 2018-06-12
6
P
TFB192503FL
Broadband Cir
cuit Impedance
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
1900
2.63
–3.92
1.36
–4.49
1930
2.56
–3.67
1.33
–4.35
1960
2.48
–3.44
1.31
–4.21
1990
2.42
–3.21
1.28
–4.07
2020
2.35
–2.98
1.26
–3.93
0.1
0.3
0.5
0.2
0.4
0
.
1
0
.
3
0
.
5
0
.
7
0
.
2
0
.
4
0
.
6
0
.
1
0
.
3
0
.
5
0
.
7
0
.
9
0
.
2
0
.
4
0
.
6
0
.
8
1
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
-
-
-
>
0
.
0
5
0
.
4
0
0
.
4
5
0
.
0
5
0
.
1
0
0
.
4
5
<
-
-
-
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Nornalize
d to 50
Ohms
b1925
03efl
db192503ef
l Sept.
9, 2009
7:36:47 PM
Z Source
Z Load
2020 M
Hz
1900 M
Hz
See next pa
ge for reference cir
cuit information
Z
0
= 50
W
Z S
ourc
e
Z Loa
d
G
S
D
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PTFB192503FL-V2-R0
Mfr. #:
Buy PTFB192503FL-V2-R0
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PTFB192503FL-V2-R0
PTFB192503EL-V1-R0