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CS19-08HO1

P1-P3P4-P5
CS19-08ho1
Single Thyristor
High Efficiency Thyristor
2 1
3
Part number
CS19-08ho1
Backside: anode
TAV
T
V V1,31
RRM
20
800
=
V
=
V
I
=
A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions.
20150827cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CS19-08ho1
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
I
A
V
T
1,32
R
0,7 K/W
min.
20
V
V
50T = 25°C
VJ
T = °C
VJ
mA1V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
110
P
tot
170 WT = 25°C
C
20
800
forward voltage drop
total power dissipation
Unit
1,65
T = 25°C
VJ
125
V
T0
V0,86T = °C
VJ
125
r
T
22
mΩ
V1,31T = °C
VJ
I = A
T
V
20
1,73
I = A40
I = A40
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
V800T = 25°C
VJ
I
A31
P
GM
Wt = 30 µs 5
max. gate power dissipation
P
T = °C
C
125
Wt = 2,5
P
P
GAV
W0,5
average gate power dissipation
C
J
9
junction capacitance
V = V230 T = 25°Cf = 1 MHz
R
VJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t
T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
180
195
120
115
A
A
A
A
155
165
160
160
800
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt)
T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R =
∞; method 1 (linear voltage rise)
VJ
D
VJ
60 A
T
P
G
= 0,15
di /dt A/µs;
G
=
0,15
DRM
cr
V =
⅔ V
DRM
GK
500
1,5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
D
VJ
28 mA
T = °C-40
VJ
2,5 V
50 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0,2 V
I
GD
gate non-trigger current
3 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
75 mA
I
L
25t
µs
p
=
10
I A;
G
= 0,1 di /dt A/µs
G
= 0,1
holding current
T = °C
VJ
50 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0,1 di /dt A/µs
G
= 0,1
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 20 V =
⅔ V
DRM
t
µs
p
= 200
non-repet., I = 20 A
T
100
R
thCH
0,50
thermal resistance case to heatsink
K/W
Thyristor
900
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions.
20150827cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CS19-08ho1
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Marking
Assembly Line
CS19-12ho1 TO-220AB (3) 1200
Package
T
op
°C
M
D
Nm0,6
mounting torque
0,4
T
VJ
°C125
virtual junction temperature
-40
Weight
g2
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
100-40
CS19-12ho1S TO-263AB (D2Pak) (2) 1200
TO-220
Similar Part Package Voltage class
CS19-08ho1S TO-263AB (D2Pak) (2) 800
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CS19-08ho1 471038Tube 50CS19-08ho1Standard
T
stg
°C150
storage temperature
-40
threshold voltage
V0,86
mΩ
V
0 max
R
0 max
slope resistance *
19
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20150827cData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
P1-P3P4-P5

CS19-08HO1

Mfr. #:
Buy CS19-08HO1
Manufacturer:
Littelfuse
Description:
SCRs 19 Amps 800V
Lifecycle:
New from this manufacturer.
Delivery:
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