0,01 0,1 1
60
80
100
120
140
0,5 1,0 1,5 2,0 2,5
0
20
40
10
0
10
1
10
2
10
3
10
4
0,0
0,2
0,4
0,6
0,8
I
TSM
[A]
I
T
A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
10
100
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150 175
0
10
20
30
40
Fig. 1 Forward characteristics
Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 10 20
0
10
20
30
40
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000
0,1
1
10
100
I
G
[mA]
V
G
t
gd
[µs]
I
G
[mA]
typ.
Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
= 2.5 W
6: P
GM
= 5 W
R
thi
[K/W] t
i
[s]
0.10 0.01
0.08 0.0011
0.18 0.025
0.17 0.32
0.17 0.09
6
5
4
3
2
1
Thyristor
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20150827cData according to IEC 60747and per semiconductor unless otherwise specified
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