BUK9606-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 1 February 2011 3 of 14
NXP Semiconductors
BUK9606-40B
N-channel TrenchMOS logic level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 40 V
V
DGR
drain-gate voltage R
GS
=20kΩ -40V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1;
see Figure 3
[1]
- 129 A
[2]
-75A
T
mb
= 100 °C; V
GS
=5V; see Figure 1
[2]
-75A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 516 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 203 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[2]
-75A
[1]
- 129 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 516 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=75A; V
sup
≤ 40 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
- 494 mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nm 23
0
50
100
150
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
Capped at 75 A due to package
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
