BUK9606-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 1 February 2011 6 of 14
NXP Semiconductors
BUK9606-40B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C40--V
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C36--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
1.1 1.5 2 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--2.3V
I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10
0.5--V
I
DSS
drain leakage current V
DS
=40V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
V
DS
=40V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=15V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-15V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=25A; T
j
= 175 °C;
see Figure 11; see Figure 12
- - 12.2 mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C - 4.1 5 mΩ
V
GS
= 4.5 V; I
D
=25A; T
j
=25°C --7.1mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11; see Figure 12
-5.76.4mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=32V; V
GS
=5V;
T
j
= 25 °C; see Figure 13
-44-nC
Q
GS
gate-source charge - 11 - nC
Q
GD
gate-drain charge - 17 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
= 25 °C; see Figure 14
- 3967 4901 pF
C
oss
output capacitance - 634 760 pF
C
rss
reverse transfer capacitance - 278 380 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-43-ns
t
r
rise time - 145 - ns
t
d(off)
turn-off delay time - 132 - ns
t
f
fall time - 92 - ns
L
D
internal drain inductance from upper edge of drain mounting
base to center of die ; T
j
=25°C
-2.5-nH
from drain lead 6 mm from package to
centre of die ; T
j
=25°C
-4.5-nH
L
S
internal source inductance from source lead to source bond pad ;
T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-61-ns
Q
r
recovered charge - 57 - nC
