REV. 0
ADF4216/ADF4217/ADF4218
–4–
TIMING CHARACTERISTICS
Limit at
T
MIN
to T
MAX
Parameter (B Version) Unit Test Conditions/Comments
t
1
10 ns min DATA to CLOCK Setup Time
t
2
10 ns min DATA to CLOCK Hold Time
t
3
25 ns min CLOCK High Duration
t
4
25 ns min CLOCK Low Duration
t
5
10 ns min CLOCK to LE Setup Time
t
6
20 ns min LE Pulsewidth
NOTES
Guaranteed by design but not production tested.
Specification subject to change without notice.
CLOCK
DATA
LE
LE
DB21 (MSB)
DB20
DB2
DB1
(CONTROL BIT C2)
t
1
t
2
t
3
t
4
t
6
t
5
DB0 (LSB)
(CONTROL BIT C1)
Figure 1. Timing Diagram
(V
DD
1 = V
DD
2 = 3 V ⴞ 10%, 5 V ⴞ 10%; V
P
1, V
P
2 = V
DD
,
5 V ⴞ 10%; AGND = DGND = 0 V;
T
A
= T
MIN
to T
MAX
unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
1, 2
(T
A
= 25°C unless otherwise noted)
V
DD
1 to GND
3
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
1 to V
DD
2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
V
P
1, V
P
2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
P
1, V
P
2 to V
DD
1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . –0.3 V to DV
DD
+ 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
A, RF
IN
B,
IF
IN
A, IF
IN
B to GND . . . . . . . . . . . –0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
TSSOP θ
JA
Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3
GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
ORDERING GUIDE
Model Temperature Range Package Description Package Option*
ADF4216BRU –40°C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20
ADF4217BRU –40°C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20
ADF4218BRU –40°C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-20
*Contact the factory for chip availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
