©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FKN08PN60 Rev. A
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
tm
August 2006
FKN08PN60
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
• Switching mode power supply, light dimmer, electric flasher unit, hair drier
• TV sets, stereo, refrigerator, washing machine
• Electric blanket, solenoid driver, small motor control
• Photo copier, electric tool
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Thermal Characteristics
Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
Symbol Parameter Value Rating Units
V
DRM
V
RRM
Peak Repetitive Off-State Voltage
Sine Wave 50 to 60Hz, Gate Open
600 V
I
T (RMS)
RMS On-State Current Commercial frequency, sine full wave
360q conduction, Tc= 70ଇ
0.8 A
I
TSM
Surge On-State Current Sinewave 1 full cycle, peak value,
non-repetitive
50Hz 8 A
60Hz 9 A
I
2
t I
2
t for Fusing Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
0.33 A
2
s
P
GM
Peak Gate Power Dissipation 5 W
P
G (AV)
Average Gate Power Dissipation 0.1 W
V
GM
Peak Gate Voltage 5V
I
GM
Peak Gate Current 1A
T
J
Junction Temperature - 40 ~ 125 qC
T
STG
Storage Temperature - 40 ~ 125 qC
Symbol Parameter Value Units
R
TJC
Thermal Resistance, Junction to Case
(note1)
40
qC/W
R
TJA
Thermal Resistance, Junction to Ambient
(note2)
160
qC/W
1
3
2
1: T
1
2: Gate
3: T
2
1 2 3
TO-92
