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FKN08PN60 Rev. A
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure 1. On-State Characteristics Figure 2. Power Dissipation
Figure 3. RMS Current Rating Figure 4. Typical Gate Trigger Current
vs Junction Temperature
Figure5. Typical Gate Voltage
vs Junction Temperarure
Figure6. Typical Latching Currrent
vs Junction Temperature
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5
T
J
=125
o
C
T
J
=25
o
C
V
TM
[V], On-State Voltage
I
TM
[A], On-State Current
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DC
180
o
C
120
o
C
90
o
C
60
o
C
30
o
C
P
AV
[W], Maximum Average Power Dissipation
IT
RMS
[A], On-State Current
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
70
80
90
100
110
120
DC
180
o
C
120
o
C
90
o
C
60
o
C
30
o
C
Maximum Allowable Case Temperature, T
C
[
o
C]
IT
RMS
[A], On-State Current
-40 0 40 80 120
0
1
2
3
4
5
6
Q3
Q1
I
GT
[mA], Gate Trigger Current
T
J
[
o
C], Junction Temperature
Q2
-40 0 40 80 120
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Q3
Q1
V
GT
[mA], Gate Trigger Voltage
T
J
[
o
C], Junction Temperature
Q2
-40 0 40 80 120
0
2
4
6
Q3
Q1
V
GT
[mA], Gate Trigger Voltage
T
J
[
o
C], Junction Temperature
