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SI7431DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Vishay Siliconix
Si7431DP
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
www.vishay.com
1
P-Channel 200 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Ultra-Low On-Resistance Critical for
Application
• Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• 100 % R
g
and Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Active Clamp in Intermediate
DC/DC Power Supplies
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ.)
- 200
0.174 at V
GS
= - 10 V - 3.8
88
0.180 at V
GS
= - 6 V - 3.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7431DP-T1-E3 (Lead (Pb)-free)
Si7431DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
- 200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25 °C
I
D
- 3.8 - 2.2
A
T
A
= 70 °C - 3.0 - 1.8
Pulsed Drain Current I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 4.2 - 1.6
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 30
Single Pulse Avalanche Energy E
AS
45 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
5.4 1.9
W
T
A
= 70 °C 3.4 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
18 23
°C/WSteady State 50 65
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.0 1.5
www.vishay.com
2
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
Vishay Siliconix
Si7431DP
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 2.0 - 4.0 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 200 V, V
GS
= 0 V - 1
µA
V
DS
= - 200 V, V
GS
= 0 V, T
J
= 70 °C - 10
On-State Drain Current
a
I
D(on)
V
DS
- 10 V, V
GS
= - 10 V - 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.8 A 0.145 0.174
V
GS
= - 6 V, I
D
= - 3.6 A 0.147 0.180
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 3.8 A 17 S
Diode Forward Voltage
a
V
SD
I
S
= - 4.2 A, V
GS
= 0 V - 0.78 - 1.2 V
Dynamic
b
Total Gate Charge Q
g
V
DS
= - 75 V, V
GS
= - 10 V, I
D
= - 5.2 A
88 135
nC
Gate-Source Charge Q
gs
16.5
Gate-Drain Charge Q
gd
25
Gate Resistance R
g
1.534.5
Tur n - O n D e l ay Time t
d(on)
V
DD
= - 75 V, R
L
= 15.5
I
D
- 4.8 A, V
GEN
= - 10 V, R
g
= 6
23 40
ns
Rise Time t
r
49 75
Turn-Off Delay Time t
d(off)
110 180
Fall Time t
f
66 100
Source-Drain Reverse Recovery Time t
rr
I
F
= - 2.9 A, dI/dt = 100 A/µs 75 120
Output Characteristics
0
5
10
15
20
25
30
35
40
0246810
V
GS
= 10 V thru 5 V
V
DS
-
Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
4 V
Transfer Characteristics
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
www.vishay.com
3
Vishay Siliconix
Si7431DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 1020304050
V
GS
= 6 V
R
DS(on)
- On-Resistance ()
I
D
- Drain Current (A)
V
GS
= 10 V
0
2
4
6
8
10
0 153045607590
V
DS
= 10 V
I
D
= 3.8 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
1.0 1.2
0.1
10
40
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
DS
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1000
2000
3000
4000
5000
6000
0 30 60 90 120 150
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.4
0.7
1.0
1.3
1.6
1.9
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.8 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0246810
I
D
= 3.8 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance ()
P1-P3P4-P6P7-P9P10-P12

SI7431DP-T1-GE3

Mfr. #:
Buy SI7431DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -200V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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