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SI7431DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
Vishay Siliconix
Si7431DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Voltage
Single Pulse Power
0
120
200
40
80
Power (W)
Time (s)
160
1100.10.010.001
Safe Operating Area
100
1
0.1 1 10 1000
0.01
10
T
C
= 25 °C
Single Pulse
I
D
- Drain Current (A)
0.1
Limited by
R
DS(on)
*
DC
10 ms
100 ms
1 s
10 s
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
www.vishay.com
5
Vishay Siliconix
Si7431DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73116
.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.05
0.02
Package Information
www.vishay.com
Vishay Siliconix
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
SO-8, (Single/Dual)
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.97 1.04 1.12 0.038 0.041 0.044
A1 - 0.05 0 - 0.002
b 0.33 0.41 0.51 0.013 0.016 0.020
c 0.23 0.28 0.33 0.009 0.011 0.013
D 5.05 5.15 5.26 0.199 0.203 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.56 3.76 3.91 0.140 0.148 0.154
D3 1.32 1.50 1.68 0.052 0.059 0.066
D4 0.57 typ. 0.0225 typ.
D5 3.98 typ. 0.157 typ.
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 5.79 5.89 5.99 0.228 0.232 0.236
E2 3.48 3.66 3.84 0.137 0.144 0.151
E3 3.68 3.78 3.91 0.145 0.149 0.154
E4 0.75 typ. 0.030 typ.
e 1.27 BSC 0.050 BSC
K 1.27 typ. 0.050 typ.
K1 0.56 - - 0.022 - -
H 0.51 0.61 0.71 0.020 0.024 0.028
L 0.51 0.61 0.71 0.020 0.024 0.028
L1 0.06 0.13 0.20 0.002 0.005 0.008
0° - 12° 0° - 12°
W 0.15 0.25 0.36 0.006 0.010 0.014
M 0.125 typ. 0.005 typ.
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
3.
Dimensions exclusive of mold flash and cutting burrs.
1.
Notes
2
Inch will govern.
Dimensions exclusive of mold gate burrs.
Backside View of Single Pad
Backside View of Dual Pad
Detail Z
D
D1
D2
c
θ
A
θ
E1
θ
D1
E2
D2
e
b
1
2
3
4
H
4
3
2
1
θ
1
2
3
4
b
L
D2
D3 (2x)
Z
A1
K1
K
D
E
W
L1
D5
E3
D4
E4
E4
K
L
H
E2
D4
D5
M
E3
2
2
P1-P3P4-P6P7-P9P10-P12

SI7431DP-T1-GE3

Mfr. #:
Buy SI7431DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -200V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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