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SI4134DY-T1-E3

P1-P3P4-P6P7-P9
Si4134DY
www.vishay.com
Vishay Siliconix
S15-2154-Rev. D, 07-Sep-15
4
Document Number: 68999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.8
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345678910
T
J
= 25 °C
T
J
= 125 °C
I
D
=10A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
16
32
48
64
80
011100.00.010.1
Time (s)
Power (W)
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Cu
rrent (A)
I
D
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
Limited by R
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
DC
Si4134DY
www.vishay.com
Vishay Siliconix
S15-2154-Rev. D, 07-Sep-15
5
Document Number: 68999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Foot Power Derating, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0.0
3.2
6.4
9.6
12.8
16.0
0 25 50 75 100 125 150
0.0
1.2
2.4
3.6
4.8
6.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Po
wer (W)
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Po
wer (W)
Si4134DY
www.vishay.com
Vishay Siliconix
S15-2154-Rev. D, 07-Sep-15
6
Document Number: 68999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68999
.
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9

SI4134DY-T1-E3

Mfr. #:
Buy SI4134DY-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 14A 8-SOIC
Lifecycle:
New from this manufacturer.
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