SI4134DY-T1-GE3

Mfr. #:: SI4134DY-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI4134DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI4134DY-T1-GE3 Datasheet SI4134DY-T1-GE3 Datasheet (P4-P6)SI4134DY-T1-GE3 Datasheet (P7-P9)
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More Information:: SI4134DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Series:: SI4

Width:: 3.9 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: SI4134DY-GE3

Unit Weight:: 0.006596 oz

Tags: SI4134DY-T, SI4134D, SI4134, SI413, SI41, SI4

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SI4134DY-T1-GE3 Ratings and Reviews

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2019-05-31

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SI4134DY-T1-GE3 Description

***ure Electronics: Single N-Channel 30 V 14 mOhm Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R / MOSFET N-CH 30V 14A 8-SOIC

***icontronic: Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET, N-CH, 30V, 14A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:14A; Power Dissipation Pd:5W; Voltage Vgs Max:20V

***ark: N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin

***(Formerly Allied Electronics): MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE

***et: Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

*** Electronics: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

***icontronic: Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ure Electronics: Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

***SIT Distribution GmbH: Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***(Formerly Allied Electronics): IRF7807ZPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC | Infineon IRF7807ZPBF

***ark: Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V

***ure Electronics: Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

***icontronic: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel

***nell: MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

***ure Electronics: N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

***p One Stop: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

SI4134DY-T1-GE3 More Information

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4134DY-T1-GE3 DISTI # V72:2272_09216454	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R RoHS: Compliant	975	1000:$0.3168 500:$0.3946 250:$0.4280 100:$0.4756 25:$0.6170 10:$0.6836 1:$0.8420
SI4134DY-T1-GE3 DISTI # V36:1790_09216454	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 14A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2396In Stock	1000:$0.3461 500:$0.4326 100:$0.5472 10:$0.7140 1:$0.8100
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 14A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2396In Stock	1000:$0.3461 500:$0.4326 100:$0.5472 10:$0.7140 1:$0.8100
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 14A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2660 12500:$0.2730 5000:$0.2835 2500:$0.3045
SI4134DY-T1-GE3 DISTI # 33622608	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R RoHS: Compliant	10000	2500:$0.1688
SI4134DY-T1-GE3 DISTI # 30616697	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R RoHS: Compliant	1571	23:$1.1300
SI4134DY-T1-GE3 DISTI # 31920021	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R RoHS: Compliant	975	52:$0.8420
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 2500	5000:$0.0608 2500:$0.0609
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4134DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.1254 15000:$0.1288 10000:$0.1325 5000:$0.1381 2500:$0.1424
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R (Alt: SI4134DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.1379 15000:€0.1489 10000:€0.1609 5000:€0.1869 2500:€0.2749
SI4134DY-T1-GE3 DISTI # 55R1920	Vishay Intertechnologies	Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 55R1920) RoHS: Not Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	500:$0.4420 250:$0.4840 100:$0.5260 50:$0.5770 25:$0.6280 10:$0.6780 1:$0.8390
SI4134DY-T1-GE3 DISTI # 15R4966	Vishay Intertechnologies	MOSFET Transistor, N Channel, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V	0	50000:$0.2580 30000:$0.2700 20000:$0.2900 10000:$0.3100 5000:$0.3360 1:$0.3440
SI4134DY-T1-GE3 DISTI # 55R1920	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 14A, SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes	4810	1:$0.1990 10:$0.1990 25:$0.1990 50:$0.1990 100:$0.1990 500:$0.1990 1000:$0.1990 2500:$0.1990
SI4134DY-T1-GE3. DISTI # 26AC3326	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0115ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:5W,No. of Pins:8Pins RoHS Compliant: No	0	50000:$0.2580 30000:$0.2700 20000:$0.2900 10000:$0.3100 5000:$0.3360 1:$0.3440
SI4134DY-T1-GE3 DISTI # R1082527	Vishay Dale	TRANSITOR,SI4850EY RoHS: Compliant	0	10:$0.5900 50:$0.4900 100:$0.4500 250:$0.4100 500:$0.3800
SI4134DY-T1-GE3 DISTI # 781-SI4134DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	6158	1:$0.7900 10:$0.6370 100:$0.4840 500:$0.4000 1000:$0.3200 2500:$0.2890 5000:$0.2700 10000:$0.2600
SI4134DY-T1-GE3 DISTI # 7103320	Vishay Intertechnologies	MOSFET N-CHANNEL 30V 9.9A SOIC8, PK	270	500:£0.3190 250:£0.3470 100:£0.3890 50:£0.4370 10:£0.5160
SI4134DY-T1-GE3 DISTI # 7103320P	Vishay Intertechnologies	MOSFET N-CHANNEL 30V 9.9A SOIC8, RL	5760	500:£0.3190 250:£0.3470 100:£0.3890 50:£0.4370
SI4134DY-T1-GE3 DISTI # SI4134DY-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,30V,11.2A,3.2W,SO8	23	500:$0.2164 100:$0.2412 25:$0.2728 5:$0.3032 1:$0.5478
SI4134DY-T1-GE3 DISTI # SI4134DY-GE3	Vishay Intertechnologies	N-Ch 30V 14A 2,5W 0,014R SO8 RoHS: Compliant	2600	50:€0.2160 100:€0.1560 500:€0.1260 2500:€0.1215
SI4134DY-T1-GE3 DISTI # TMOSP11170	Vishay Intertechnologies	N-CH 30V 14A 14mOhmSO-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.2600 5000:$0.2451 7500:$0.2302 10000:$0.2080 12500:$0.2005
SI4134DY-T1-GE3 DISTI # 1779239	Vishay Intertechnologies	MOSFET, N-CH, 30V, 14A, SO8	5123	500:£0.3110 250:£0.3440 100:£0.3770 10:£0.5470 1:£0.7130
SI4134DY-T1-GE3 DISTI # 1779239	Vishay Intertechnologies	MOSFET, N-CH, 30V, 14A, SO8 RoHS: Compliant	4690	2500:$0.4370 1000:$0.4820 500:$0.6030 100:$0.7310 10:$0.9610 1:$1.2100
SI4134DY-T1-GE3 DISTI # 1779239RL	Vishay Intertechnologies	MOSFET, N-CH, 30V, 14A, SO8 RoHS: Compliant	0	2500:$0.4370 1000:$0.4820 500:$0.6030 100:$0.7310 10:$0.9610 1:$1.2100
SI4134DY-T1-GE3 DISTI # C1S806001150593	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1571	1000:$0.2160 500:$0.2330 100:$0.2880 50:$0.3150 10:$0.4520 1:$0.9040
SI4410BDY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3	Americas - 55000	2500:$0.3150 5000:$0.2980 10000:$0.2880 20000:$0.2820
SI4134DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 50000	2500:$0.1480 5000:$0.1360 10000:$0.1330 20000:$0.1300

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SI4134DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

H***h

E**e

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes