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BCV61C,215

P1-P3P4-P6P7-P9P10-P12P13-P14
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 3 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
I
CBO
collector-base cut-off current V
CB
=30V;
I
E
=0A
--15nA
V
CB
=30V;
I
E
=0A;
T
j
= 150 °C
--5μA
I
EBO
emitter-base cut-off current V
EB
=5V;
I
C
=0A
- - 100 nA
h
FE
DC current gain V
CE
=5V;
I
C
= 100 μA
100 - -
V
CE
=5V;
I
C
=2mA
110 - 800
V
CEsat
collector-emitter saturation
voltage
I
C
=10mA;
I
B
=0.5mA
- 90 250 mV
I
C
= 100 mA;
I
B
=5mA
- 200 600 mV
V
BEsat
base-emitter saturation voltage I
C
=10mA;
I
B
=0.5mA
[1]
- 700 - mV
I
C
= 100 mA;
I
B
=5mA
[1]
- 900 - mV
V
BE
base-emitter voltage I
C
=2mA;
V
CE
=5V
[2]
580 660 700 mV
I
C
=10mA;
V
CE
=5V
[2]
- - 770 mV
f
T
transition frequency V
CE
=5V;
I
C
=10mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
-2.5-pF
NF noise figure V
CE
=5V;
I
C
= 200 μA;
R
S
=2kΩ;
f=1kHz;
B=200Hz
--10dB
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
Transistor TR2
V
EBS
emitter-base voltage V
CB
=0V;
I
E
= −250 mA
--−1.8 V
V
CB
=0V;
I
E
= −10 μA
−400--mV
h
FE
DC current gain V
CE
=5V;
I
C
=2mA
BCV61 110 - 800
BCV61A 110 - 220
BCV61B 200 - 450
BCV61C 420 - 800
Transistors TR1 and TR2
I
C1
/I
E2
current matching I
E2
= −0.5 mA;
V
CE1
=5V
T
amb
≤ 25 °C 0.7 - 1.3
T
amb
≤ 150 °C 0.7 - 1.3
I
E2
emitter current 2 V
CE1
=5V
[3]
--−5mA
Table 7. Characteristics
…continued
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 5 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
V
CE
=5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
=5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 1. BCV61A: DC current gain as a function of
collector current; typical values
Fig 2. BCV61A: Base-emitter voltage as a function of
collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
Fig 3. BCV61A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV61A: Base-emitter saturation voltage as a
function of collector current; typical values
mgt723
10
−1
11010
2
10
3
I
C
(mA)
0
400
300
200
100
h
FE
(1)
(2)
(3)
mgt724
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BE
(mV)
(1)
(2)
(3)
10
3
10
2
10
mgt725
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt726
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P14

BCV61C,215

Mfr. #:
Buy BCV61C,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
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