TBD62786AFNG,EL

TBD62786APG/FNG/FWG
2017-07-05
1
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62786APG, TBD62786AFNG, TBD62786AFWG
8-ch low active source type DMOS transistor array
TBD62786A series are DMOS transistor arrays with 8 circuits. Each output
has an internal clamp diode that clamps the back electromotive force
generated in driving inductive loads. Please be careful about thermal
conditions during use.
Features
8 circuits built-in
High output voltage : V
OUT
= 50 V (max)
Large output current : I
OUT
= -500 mA (max, per 1 ch)
Input voltage (output on) : -30 to -2.8 V
Input voltage (output off) : -1.2 to 0 V
Package : PG type P-DIP18-300-2.54-001
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
Pin connection (top view)
Pin Connection may be omitted partially or simplified for explanatory purposes.
TBD62786APG
P-DIP18-300-2.54-001
TBD62786AFNG
TBD62786AFWG
P-SOP18-0812-1.27-001
Weight
P
-DIP18-300-2.54-001 : 1.3 g (typ.)
SSOP18
-P-225-0.65 : 0.09 g (typ.)
P
-SOP18-0812-1.27-001 : 0.48 g (typ.)
VCC
I1
I2
I3
I4
I5
I6
I7
I8
GND
O1
O2
O3
O4
O5
O6
O7
O8
© 2017
Toshiba Electronic Devices & Storage Corporation
TBD62786APG/FNG/FWG
2017-07-05
2
Pin description
Pin No. Pin name Function
I1
Input pin
I2
Input pin
I3
Input pin
I4
Input pin
I5
Input pin
I6
Input pin
I7
Input pin
I8
Input pin
VCC
Power supply pin
GND
GND pin
O8
Output pin
O7
Output pin
O6
Output pin
O5
Output pin
O4
Output pin
O3
Output pin
O2
Output pin
O1
Output pin
Basic circuit
Basic circuit may be omitted partially or simplified for explanatory purpose.
VCC
OUTPUT
INPUT
Clamp
circuit
Clamp
diode
TBD62786APG/FNG/FWG
2017-07-05
3
Absolute maximum ratings (
T
a
=
25
°C
, V
CC
=
0 V)
Characteristics Symbol Rating Unit
Power supply voltage V
CC
-V
GND
50 V
Output voltage V
OUT
-50 to 0.5 V
Output current
(per 1 ch)
I
OUT
-500 mA
Input voltage V
IN
−30 to 0.5 V
Clamp diode reverse voltage V
R
50 V
Clamp diode forward current I
F
500 mA
Power
dissipation
PG (Note 1)
P
D
1.47
W
FNG (Note 2) 0.96
FWG (Note 3) 1.31
Operating temperature T
opr
−40 to 85 °C
Storage temperature T
stg
−55 to 150 °C
Note 1: Stand alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C.
Operating ranges (T
a
= 40 to 85°C and V
CC
= 0 V, unless otherwise specified)
Characteristics
Symbol
Condition
Min
Typ.
Max
Unit
Power supply voltage V
CC
-V
GND
I
OUT
= -100 mA 2.0
50
V
Output voltage V
OUT
-50
0
V
Output current
(per 1 ch)
PG (Note 1)
I
OUT
One circuit ON, Ta = 25 °C 0
-400
mA
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10 % 0
-390
Duty = 50 % 0
-170
FNG (Note 2)
One circuit ON, Ta = 25 °C 0
-400
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10 % 0
-320
Duty = 50 % 0
-140
FWG (Note 3)
One circuit ON, Ta = 25 °C 0
-400
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10 % 0
-370
Duty = 50 % 0
-160
Input voltage (Output on) V
IN
(ON)
I
OUT
= -100 mA or more, V
DS
= 2.0 V -30
-2.8
V
Input voltage (Output off) V
IN
(OFF)
I
OUT
= -100 μA or less, V
DS
= 2.0 V -1.2
0
V
Clamp diode forward current I
F
400
mA
Note 1: Stand alone
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)

TBD62786AFNG,EL

Mfr. #:
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 8-CH 50V -0.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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