OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TBD62786AFNG,EL

P1-P3P4-P6P7-P9P10-P10
TBD62786APG/FNG/FWG
2017-07-05
4
Electrical characteristics (T
a
= 25°C and V
CC
= 0 V, unless otherwise specified)
Characteristics Symbol
Test
circuit
Condition Min Typ. Max Unit
Output leakage current I
leak
1
V
IN
= 0 V, V
OUT
= V
GND
= -50 V
Ta = 85 °C
― ― 1.0 μA
Output voltage
(Output ON-resistance)
V
DS
(R
ON)
2
I
OUT
= -350 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
―
0.56
(1.6)
1.14
(3.25)
V
(Ω)
I
OUT
= -200 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
―
0.32
(1.6)
0.65
(3.25)
I
OUT
= -100 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
―
0.16
(1.6)
0.325
(3.25)
Input current
I
IN(ON)
3 V
IN
= -2.8 V, V
GND
= -50 V, Output OPEN ― ― -30 μA
I
IN(OFF)
4 V
IN
= 0 V, V
GND
= -50 V, Output OPEN
―
―
1 μA
Current consumption
(per 1 ch)
I
CC(ON)
3 V
IN
= -2.8 V, V
GND
= -50 V, Output OPEN
―
―
5 mA
I
CC(OFF)
4 V
IN
= 0 V, V
GND
= -50 V, Output OPEN
―
―
1 μA
Clamp diode leakage current
I
R
5
V
R
= 50 V, T
a
= 85 °C
―
―
1 μA
Clamp diode forward voltage
V
F
6
I
F
= 350 mA
―
―
2.0 V
Turn-on delay t
ON
7
V
OUT
= V
GND
= -50 V
R
L
= 160 Ω
C
L
= 15 pF
― 0.2 ―
μs
Turn-off delay t
OFF
― 2.0 ―
TBD62786APG/FNG/FWG
2017-07-05
5
Test circuit
1. I
leak
2. V
DS
(R
ON
)
3. I
IN(ON)
, I
CC(ON)
4. I
IN(OFF)
, I
CC(OFF)
5. I
R
6. V
F
Test circuits may be omitted partially or simplified for explanatory purpose.
I
leak
OUTPUT
GND
VCC
INPUT
V
IN
V
GND
V
OUT
R
ON
= V
DS
/ I
OUT
V
DS
I
OUT
OUTPUT
GND
VCC
INPUT
V
IN
V
GND
V
OUT
OUTPUT
GND
VCC
INPUT
V
IN
V
GND
I
lN(ON)
I
CC(ON)
I
R
OUTPUT
GND
VCC
INPUT
V
R
I
F
OUTPUT
GND
VCC
INPUT
V
F
OUTPUT
GND
VCC
INPUT
V
IN
V
GND
I
lN(OFF)
I
CC(OFF)
TBD62786APG/FNG/FWG
2017-07-05
6
7. t
ON
, t
OFF
Note 1: Pulse width 50 μs, Duty cycle 10%
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Note 2: C
L
includes capacitance of the probe and the test board.
Test circuit and timing charts may be omitted partially or simplified for explanatory purpose.
Precautions for Using
This IC does not incorporate protection circuits for over current and over voltage.
Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred,
the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing,
please consider enough in power supply line, output line, and GND line.
In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the
appropriate fuse in the power supply line.
(注 2)
(注 1)
Input
C
L
(
Note 2)
(Note 1)
Pulse
generator
V
CC
R
L
Output
V
OUT
GND
V
GND
t
ON
t
OFF
0 V
V
OH
V
OL
Input
50%
50 μs
Output
50%
50%
50%
-5.0
P1-P3P4-P6P7-P9P10-P10

TBD62786AFNG,EL

Mfr. #:
Buy TBD62786AFNG,EL
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 8-CH 50V -0.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet