IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX25N250CV1
IXYX25N250CV1HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 25A, V
GE
= 0V, Note 1 3.5 V
T
J
= 150°C 3.1 V
I
RM
38 A
t
rr
185 ns
R
thJC
0.32 °C/W
I
F
= 25A, V
GE
= 0V, T
J
= 150°C
-di
F
/dt = 500A/sV
R
= 1200V
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 25A, V
CE
= 10V, Note 1 16 27 S
R
Gi
Gate Input Resistance 2.8
C
ies
3060 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 166 pF
C
res
43 pF
Q
g(on)
147 nC
Q
ge
I
C
= 25A, V
GE
= 15V, V
CE
= 0.5 • V
CES
16 nC
Q
gc
68 nC
t
d(on)
15 ns
t
ri
34 ns
E
on
8.3 mJ
t
d(off)
230 ns
t
fi
246 ns
E
off
7.3 mJ
t
d(on)
18 ns
t
ri
33 ns
E
on
11.0 mJ
t
d(off)
225 ns
t
fi
350 ns
E
off
10.5 mJ
R
thJC
0.16 °C/W
R
thCS
0.15 °C/W
Inductive load, T
J
= 150°C
I
C
= 25A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5
Note 2
Inductive load, T
J
= 25°C
I
C
= 25A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 5
Note 2
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
