© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXY_25N250CV1HV(7T-AT628) 4-17-17-B
IXYX25N250CV1
IXYX25N250CV1HV
Fig. 27. Maximum Transient Thermal Impedance
(Diode)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 22. Diode Forward Characteristics
0
20
40
60
80
100
120
140
012345678
V
F
(V)
I
F
(A)
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 23. Reverse Recovery Charge vs. -di
F
/dt
1
2
3
4
5
6
7
8
200 400 600 800 1000 1200 1400
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 50A
12.5A
25A
T
J
= 150
o
C
V
R
= 1200V
Fig. 24. Reverse Recovery Current vs. -di
F
/dt
20
30
40
50
60
70
80
200 400 600 800 1000 1200 1400
di
F
/dt (A/μs)
I
RR
(A)
12.5A
25A
I
F
= 50A
T
J
= 150
o
C
V
R
= 1200V
Fig. 25. Reverse Recovery Time vs. -di
F
/dt
80
120
160
200
240
280
320
200 400 600 800 1000 1200 1400
-di
F
/dt (A/μs)
t
RR
(ns)
12.5A
25A
I
F
= 50A
T
J
= 150
o
C
V
R
= 1200V
Fig. 26. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 25A
-diF/dt = 500A/μs
