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IRFHS9351TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 2
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
V
DS
-30 V
V
GS max
±20 V
R
DS(on) max
(@V
GS
= -10V)
170
m
Ω
I
D
(@T
C
= 25°C)
-3.4 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
1.4
0.01
0.9
Max.
-2.3
-4.1
-20
± 20
-30
-1.5
-5.1
-3.4
V
W
A
°C
D2
3
G1 2
S1 1
4S2
5G2
6D1
TOP VIEW
D1
D2
FET1
FET2
2mm x 2mm Dual PQFN
D2
G1
S1
S2
G2
D1
D1
D2
IRFHS9351PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014
Form Quantity
IRFHS9351TRPBF PQFN 2mm x 2mm Tape and Reel 4000
IRFHS9351TR2PBF
PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
Features Benefits
Low R
DSon
(
≤
170m
Ω)
Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
19°C/W) Enable better thermal dissipation
Low Profile (
≤
1.0 mm) results in Increased Power Density
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014
IRFHS9351PbF
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package. .
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-t o-Source Breakdown Voltage -30 ––– ––– V
V
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
––– 135 170
––– 235 290
V
GS(th )
Ga te Th resh old Volt age -1. 3 -1.8 -2.4 V
V
GS(th)
Gate Threshold Volt age Coefficient ––– -4.6 ––– mV/°C
I
DSS
Drain-t o-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 2.4 ––– ––– S
Q
g
Total Gate Charge ––– 1. 9 ––– nC V
DS
= -15V,V
GS
= -4.5V,I
D
= - 3.1A
Q
g
Total Gate Charge ––– 3. 7 –––
Q
gs
Gate-to-Source Charge ––– 0. 6 –––
Q
gd
Gate-to-Drain Charge ––– 1. 1 –––
R
G
Ga te R esis tan ce ––– 17 –––
t
d(on)
Turn-On Delay Time ––– 8.3 –––
t
r
Rise Time ––– 30 –––
t
d(off)
Turn-Off Delay Time ––– 6.3 –––
t
f
Fall Time ––– 7.9 –––
C
iss
Input Capacitance ––– 160 –––
C
oss
Output Capacitance ––– 39 –––
C
rss
Reverse Transfer C apacitance ––– 26 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Volt age ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 20 30 n s
Q
rr
Reverse Recovery Charge ––– 42 63 nC
Thermal Resistance
Param eter Units
R
(Bottom)
Junction-to-Case
R
JC
(To p)
Junction-to-Case
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient (t<10s)
90
Sta tic Dra in-to -S ou rce On -Re si stan ce
A
––– –––
––– –––
-5.1
Typ.
nA
nC
ns
pF
R
G
= 1 .8
See Figs. 19a & 19b
ƒ = 1.0KHz
V
GS
= 0V
V
DS
= -25V
V
DS
= -10V, I
D
= -3.1A
V
DS
= -24V, V
GS
= 0 V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
I
D
= -3.1A
V
DS
= -15V
V
GS
= -20V
V
GS
= 20V
V
GS
= -10V
m
μA
T
J
= 25°C, I
F
= -3.1A, V
DD
= -15V
di/dt = 370/μs
T
J
= 25°C, I
S
= -3.1A, V
GS
= 0V
showing the
inte gral re ve rse
p-n junction diode.
MOSFET symbol
I
D
= -3.1A
V
DS
= -24V, V
GS
= 0 V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.1A
V
GS
= -4.5V, I
D
= -2.5A
V
DS
= V
GS
, I
D
= -10μ A
––– 170
°C/W
Conditions
-20
–––
–––
Max.
19
75
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 21, 2014
IRFHS9351PbF
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
BOTTOM -2.8V
≤60μs PULSE WIDTH
Tj = 25°C
-2.8V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-8.0V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
BOTTOM -2.8V
≤
60μs
PULSE WIDTH
Tj = 150°C
-2.8V
1 2 3 4 5 6 7 8
-V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -15V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -3.1A
V
GS
= -10V
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
10
100
1000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 KHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
012345
Q
G
,
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -24V
V
DS
= -15V
I
D
= -3.1A
P1-P3P4-P6P7-P9

IRFHS9351TRPBF

Mfr. #:
Buy IRFHS9351TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET DUAL -30V P-CH 20V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
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