IRFHS9351TRPBF

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IRFHS9351PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.4 0.6 0.8 1.0 1.2 1.4
-V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
25 50 75 100 125 150
T
C
, CaseTemperature (°C)
0
1
2
3
4
5
6
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
-
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= -10uA
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IRFHS9351PbF
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 14. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T *
Fig 15. Diode Reverse Recovery Test Circuit for P-Channel HEXFET
®
Power MOSFETs
0 5 10 15 20 25
-V
GS,
Gate -to -Source Voltage (V)
100
200
300
400
500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= -3.1A
T
J
= 25°C
T
J
= 125°C
0 2 4 6 8
-I
D
, Drain Current (A)
100
200
300
400
500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
Vgs = -10V
Vgs = -4.5V
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
100
200
300
400
P
o
w
e
r
(
W
)
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IRFHS9351PbF
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
Fig 17b. Unclamped Inductive Waveforms
Fig 17a. Unclamped Inductive Test Circuit
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-V
GS
V
DS
-V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
t
p
V
(
BR
)
DSS
I
AS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f

IRFHS9351TRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET DUAL -30V P-CH 20V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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