IXYH80N90C3 Datasheet IXYH80N90C3, IXYT80N90C3 | P1-P3

IXYT80N90C3

IXYH80N90C3

V

CES

= 900V

I

C110

= 80A

V

CE(sat)







2.7V

t

fi(typ)

= 86ns

DS100446B(12/15)

High-Speed IGBT

for 20-50 kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 950 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 5.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 A

T

J

= 150C 750 A

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 60A, V

GE

= 15V, Note 1 2.3 2.7 V

T

J

= 150C 2.9 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 900 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 900 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 165 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 80 A

I

CM

T

C

= 25°C, 1ms 360 A

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 2 I

CM

= 160 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

P

C

T

C

= 25°C 830 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

Features



Optimized for Low Switching Losses



Square RBSOA



Positive Thermal Coefficient of

Vce(sat)



International Standard Packages

Advantages



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

XPT

TM

900V IGBT

GenX3

TM

G = Gate C = Collector

E = Emiiter Tab = Collector

TO-247 (IXYH)

G

E

C (Tab)

C

TO-268 (IXYT)

E

G

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYT80N90C3

IXYH80N90C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 23 38 S

C

ie

s

4550 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 243 pF

C

res

77 pF

Q

g(on)

145 nC

Q

ge

I

C

= 80A, V

GE

= 15V, V

CE

= 0.5 • V

CES

42 nC

Q

gc

65 nC

t

d(on)

34 ns

t

ri

103 ns

E

on

4.3 mJ

t

d(off)

90 ns

t

fi

86 ns

E

of

f

1.9 2.7 mJ

t

d(on)

34 ns

t

ri

100 ns

E

on

5.7 mJ

t

d(off)

103 ns

t

fi

98 ns

E

off

2.5 mJ

R

thJC

0.18 °C/W

R

thCS

TO-247 0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 80A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 2

Note 2

Inductive load, T

J

= 150°C

I

C

= 80A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 2

Note 2

TO-247 Outline

Terminals: 1 - Gate 2 - Collector

3 - Emitter

TO-268 Outline

Terminals: 1 - Gate 2,4 - Collector

3 - Emitter

e

P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXYT80N90C3

IXYH80N90C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

13V

10V

9V

11V

8V

12V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

11V

13V

12V

7V

9V

14V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

160

00.511.522.533.544.555.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

10V

8V

9V

6V

11V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 80A

I

C

= 40A

I

C

= 160A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 160A

T

J

= 25ºC

80A

40A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

4 5 6 7 8 9 10 11 12

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYH80N90C3

IXYH80N90C3

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