OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXYH80N90C3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT80N90C3
IXYH80N90C3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
100 200 300 400 500 600 700 800 900
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 450V
I
C
= 80A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 11. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
DC
100µs
© 2015 IXYS CORPORATION, All Rights Reserved
IXYT80N90C3
IXYH80N90C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.0
1.4
1.8
2.2
2.6
3.0
3.4
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 450V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
50
75
100
125
150
175
200
225
250
2 3 4 5 6 7 8 9 101112131415
R
G
- Ohms
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 450V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 450V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 450V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
25
50
75
100
125
150
175
200
225
40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
70
80
90
100
110
120
130
140
150
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 450V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50
75
100
125
150
175
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
60
80
100
120
140
160
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 450V
I
C
= 80A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT80N90C3
IXYH80N90C3
IXYS REF: IXY_80N90C3(7D) 02-16-12
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
26
28
30
32
34
36
38
40
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 450V
T
J
= 25ºC, 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
28
29
30
31
32
33
34
35
36
37
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 450V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
r i
- Nanoseconds
20
28
36
44
52
60
68
76
84
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 450V
I
C
= 40A
I
C
= 80A
P1-P3P4-P6

IXYH80N90C3

Mfr. #:
Buy IXYH80N90C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet