CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 7 of 17
AC Switching Characteristics
Over the Operating Range
Parameter
[9]
Description
-10
Unit
Min Max
Read Cycle
t
power
[10]
V
CC
(typical) to the first access 100 s
t
RC
Read cycle time 10 ns
t
AA
Address to data valid 10 ns
t
OHA
Data hold from address change 3 ns
t
ACE
CE LOW to data valid 10 ns
t
DOE
OE LOW to data valid 5 ns
t
LZOE
OE LOW to low Z
[11]
0–ns
t
HZOE
OE HIGH to high Z
[11, 12]
–5ns
t
LZCE
CE LOW to low Z
[11]
3–ns
t
HZCE
CE HIGH to high Z
[11, 12]
–5ns
t
PU
CE LOW to power-up 0 ns
t
PD
CE HIGH to power-down 10 ns
t
DBE
Byte enable to data valid 5 ns
t
LZBE
Byte enable to low Z 0 ns
t
HZBE
Byte disable to high Z 6 ns
Write Cycle
[13, 14]
t
WC
Write cycle time 10 ns
t
SCE
CE LOW to write end 7 ns
t
AW
Address set-up to write end 7 ns
t
HA
Address hold from write end 0 ns
t
SA
Address set-up to write start 0 ns
t
PWE
WE pulse width 7–ns
t
SD
Data set-up to write end 5 ns
t
HD
Data hold from write end 0 ns
t
LZWE
WE HIGH to low Z
[11]
3–ns
t
HZWE
WE LOW to high Z
[11, 12]
–5ns
t
BW
Byte enable to end of write 7 ns
Notes
9. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V.
10. t
POWER
gives the minimum amount of time that the power supply should be at typical V
CC
values until the first memory access is performed.
11. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, t
HZBE
is less than t
LZBE
,
and t
HZWE
is less than t
LZWE
for any given
device.
12. t
HZOE
, t
HZCE
, t
HZBE
and t
HZWE
are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured when the outputs enter a high
impedance state.
13. The internal write time of the memory is defined by the overlap of CE
LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either
of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
14. The minimum write cycle pulse width for Write Cycle No. 4 (WE
Controlled, OE LOW) should be the sum of t
SD
and t
HZWE
.
CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 8 of 17
Switching Waveforms
Figure 5. Read Cycle No. 1
[15, 16]
Figure 6. Read Cycle No. 2 (OE Controlled)
[16, 17]
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
t
DBE
t
LZBE
t
HZCE
BHE, BLE
CURRENT
I
CC
I
SB
Notes
15. Device is continuously selected. OE
, CE, BHE and/or BHE = V
IL
.
16. WE
is HIGH for read cycle.
17. Address valid prior to or coincident with CE
transition LOW.
CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 9 of 17
Figure 7. Write Cycle No. 1 (CE Controlled)
[18, 19]
Figure 8. Write Cycle No. 2 (BLE or BHE Controlled)
Switching Waveforms (continued)
t
HD
t
SD
t
SCE
t
SA
t
HA
t
AW
t
PWE
t
WC
BW
DATAI/O
ADDRESS
CE
WE
BHE, BLE
t
t
HD
t
SD
t
BW
t
SA
t
HA
t
AW
t
PWE
t
WC
t
SCE
DATA I/O
ADDRESS
BHE
,BLE
WE
CE
Notes
18. Data I/O is high-impedance if OE
or BHE and/or BLE = V
IH
.
19. If CE
goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.

CY7C1011DV33-10ZSXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 2Mb 10ns3.3V 128Kx16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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