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10
polarity reversal of the inductor current to maximize light
load conversion efficiency. DRVLSD can also be pulled
low for reverse voltage protection purposes.
When DRVLSD is low, the low-side driver stays low.
When DRVLSD is high, the low-side driver is enabled and
controlled by the driver signals, as previously described.
LowSide Driver Timeout
In normal operation, the DRVH signal tracks the IN
signal and turns off the Q1 high-side switch with a few 10
ns delay (t
pdlDRVH
) following the falling edge of the input
signal. When Q1 is turned off, DRVL is allowed to go high,
Q2 turns on, and the SW node voltage collapses to zero. But
in a fault condition such as a high-side Q1 switch
drain-source short circuit, the SW node cannot fall to zero,
even when DRVH goes low. The ADP3611 has a timer
circuit to address this scenario. Every time the IN goes low,
a DRVL on-time delay timer is triggered. If the SW node
voltage does not trigger a low-side turn-on, the DRVL
on-time delay circuit does it instead, when it times out with
t
SW(TO)
delay. If Q1 is still turned on, that is, its drain is
shorted to the source, Q2 turns on and creates a direct short
circuit across the V
DCIN
voltage rail. The crowbar action
causes the fuse in the V
DCIN
current path to open. The
opening of the fuse saves the load (CPU) from potential
damage that the high-side switch short circuit could have
caused.
Crowbar Function
In addition to the internal low-side drive time-out circuit,
the ADP3611 includes a CROWBAR input pin to provide
a means for additional overvoltage protection. When
CROWBAR goes high, the ADP3611 turns off DRVH and
turns on DRVL. The crowbar logic overrides the overlap
protection circuit, the shutdown logic, the DRVLSD logic,
and the UVLO protection on DRVL. Thus, the crowbar
function maximizes the overvoltage protection coverage in
the application. The CROWBAR can be either driven by
the CLAMP pin of buck controllers, such as the
ADP3207A, or ADP3210, or controlled by an independent
overvoltage monitoring circuit.
Table 5. ADP3611 Truth Table
CROWBAR UVLO SD DRVLSD IN DRVH DRVL
L L H H H H L
L L H H L L H
L L H L H H L
L L H L L L L
L L L * * L L
L H * * * L L
H L * * * L H
H H * * * L H
* = Don’t Care
APPLICATION INFORMATION
Supply Capacitor Selection
For the supply input (VCC) of the ADP3611, a local
bypass capacitor is recommended to reduce the noise and
to supply some of the peak currents drawn. Use a 10 mF or
4.7 mF multilayer ceramic (MLC) capacitor. MLC
capacitors provide the best combination of low ESR and
small size, and can be obtained from the following vendors.
Table 6.
Vendor Part Number Web Address
Murata GRM235Y5V106Z16 www.murata.com
TaiyoYuden EMK325F106ZF www.tyuden.com
Tokin C23Y5V1C106ZP www.tokin.com
Keep the ceramic capacitor as close as possible to the ADP3611.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor
(CBST) and a synchronous MOSFET rectifier (D1), as
shown in Figure 18. Selection of these components can be
done after the high-side MOSFET has been chosen. The
bootstrap capacitor must have a voltage rating that is able
to handle at least 5 V more than the maximum supply
voltage. The capacitance is determined by
C
BST
+
Q
HSGATE
DV
BST
(eq. 1)
where:
Q
HSGATE
is the total gate charge of the high-side MOSFET.
DV
BST
is the voltage droop allowed on the high-side
MOSFET drive.
For example, two NTMFS4821N MOSFETs in parallel
have a total gate charge of about 20 nC. For an allowed
droop of 100 mV, the required bootstrap capacitance is
200 nF. A good quality ceramic capacitor should be used,
and derating for the significant capacitance drop of MLCs
at high temperature must be applied. In this example,
selection of 470 nF or even 1 mF would be recommended.
Normally a Schottky diode is recommended for the
bootstrap diode due to its low forward drop, which
maximizes the drive available for the high-side MOSFET.
Using a synchronous MOSFET rectifier instead of a
Schottky diode has the advantage of an even lower forward
voltage drop. A lower forward voltage drop gives a larger
drive voltage for the high-side MOSFET and a lower
conduction loss for the high-side MOSFET. The bootstrap
diode must also be able to handle at least 5 V more than the
maximum battery voltage. The average forward current
can be estimated by
I
F(AVG)
+ Q
HSGATE
f
MAX
(eq. 2)
where f
MAX
is the maximum switching frequency of the
controller.
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11
Power and Thermal Considerations
The major power consumption of the ADP3611-based
driver circuit is from the dissipation of MOSFET gate
charge. It can be estimated as
P
MAX
[ VCC (Q
HSGATE
) Q
LSGATE
) f
MAX
(eq. 3)
where:
V
CC
is the supply voltage 5 V.
f
MAX
is the highest switching frequency.
Q
HSGATE
and Q
LSGATE
are the total gate charge of
high-side and low-side MOSFETs, respectively.
For example, the ADP3611 drives two NTMFS4821N
high-side MOSFETs and two NTMFS4846N low-side
MOSFETs. According to the MOSFET data sheets,
Q
HSGATE
= 20 nC and Q
LSGATE
= 40 nC. Given that f
MAX
is 300 kHz, P
MAX
would be about 90 mW.
Part of this power consumption generates heat inside the
ADP3611. The temperature rise of the ADP3611 against its
environment is estimated as
DT [ q
JA
P
MAX
h
(eq. 4)
where q
JA
is ADP3611’s thermal resistance from junction
to air, given in the absolute maximum ratings as 220°C/W
for a 4 layer board.
The total MOSFET drive power dissipates in the output
resistance of ADP3611 and in the MOSFET gate resistance
as well. h represents the ratio of power dissipation inside
the ADP3611 over the total MOSFET gate driving power.
For normal applications, a rough estimation for h is 0.7. A
more accurate estimation can be calculated using
h [
Q
HSGATE
Q
HSGATE
) Q
LSGATE
ǒ
0.5 R1
R1 ) R
HSGATE
) R
)
0.5 R2
R2 ) R
HSGATE
Ǔ
(eq. 5)
Q
LSGATE
Q
HSGATE
) Q
LSGATE
ǒ
0.5 R3
R3 ) R
LSGATE
)
0.5 R4
R4 ) R
LSGATE
Ǔ
where:
R1 and R2 are the output resistances of the high-side driver:
R1 = 1.7 (DRVH BST), R2 = 0.8 (DRVH SW).
R3 and R4 are the output resistances of the low-side driver:
R3 = 1.7 (DRVL VCC), R4 = 0.8 (DRVL GND).
R is the external resistor between the BST pin and the BST
capacitor.
R
HSGATE
and R
LSGATE
are gate resistances of high-side and
low-side MOSFETs, respectively.
Assuming that R = 0 and that R
HSGATE
= R
LSGATE
= 0.5,
Equation 5 gives a value of h = 0.71. Based on Equation 4,
the estimated temperature rise in this example is about
22°C.
PC Board Layout Considerations
Use the following general guidelines when designing
printed circuit boards. Figure 19 gives an example of the
typical land patterns based on the guidelines given here.
The VCC bypass capacitor should be located as close
as possible to the VCC and GND pins. Place the
ADP3611 and bypass capacitor on the same layer of
the board, so that the PCB trace between the ADP3611
VCC pin and the MLC capacitor does not contain any
via. An ideal location for the bypass MLC capacitor is
near Pin 5 and Pin 6 of the ADP3611.
High frequency switching noise can be coupled into
the VCC pin of the ADP3611 via the BST diode.
Therefore, do not connect the anode of the BST diode
to the VCC pin with a short trace. Use a separate via
or trace to connect the anode of the BST diode directly
to the VCC 5 V power rail.
It is best to have the low-side MOSFET gate close to
the DRVL pin; otherwise, use a short and very thick
PCB trace between the DRVL pin and the low-side
MOSFET gate.
Fast switching of the high-side MOSFET can reduce
switching loss. However, EMI problems can arise due
to the severe ringing of the switch node voltage.
Depending on the character of the low-side MOSFET,
a very fast turn-on of the high-side MOSFET may
falsely turn on the low-side MOSFET through the
dv/dt coupling of its Miller capacitance. Therefore,
when fast turn-on of the high-side MOSFET is not
required by the application, a resistor of about 1 W to
2 W can be placed between the BST pin and the BST
capacitor to limit the turn-on speed of the high-side
MOSFET.
Figure 19. External Component Placement Example
C
VCC
To
Switch
Node
Short, Thick Trace
to the Gates of
LowSide MOSFETs
C
BST
R
BST
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12
PACKAGE DIMENSIONS
DFN8
CASE 506AA01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
D
E
B
C0.10
PIN ONE
2 X
REFERENCE
2 X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
L
(A3)
D2
E2
C
C0.10
C0.10
C0.08
8 X
A1
SEATING
PLANE
e/2
e
8 X
K
NOTE 3
b8 X
0.10 C
0.05 C
A
BB
DIM MIN MAX
MILLIMETERS
A 0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b 0.20 0.30
D 2.00 BSC
D2 1.10 1.30
E 2.00 BSC
E2 0.70 0.90
e 0.50 BSC
K 0.20 −−−
L 0.25 0.35
1
4
8
5

ADP3611JRMZ-REEL

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers DUAL HI VLTGE MOSFET
Lifecycle:
New from this manufacturer.
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